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参数资料
| 型号： | 2SC5801 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | M13, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 56K |
| 代理商： | 2SC5801 |
NE851M13
NPN SILICON TRANSISTOR
NEW MINIATURE M13 PACKAGE:
– Small transistor outline
– 1.0 X 0.5 X 0.5 mm
– Low profile / 0.50 mm package height
– Flat lead style for better RF performance
IDEAL FOR
≤ 3 GHz OSCILLATORS
LOW PHASE NOISE
LOW PUSHING FACTOR
FEATURES
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M13
PRELIMINARY DATA SHEET
PART NUMBER
NE851M13
EIAJ1 REGISTERED NUMBER
2SC5801
PACKAGE OUTLINE
M13
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
fT
Gain Bandwidth at VCE = 1 V, IC = 5 mA, f = 2 GHz
GHz
3.0
4.5
–
fT
Gain Bandwidth at VCE = 1 V, IC = 15 mA, f = 2 GHz
GHz
5.0
6.5
|S21E|2
Insertion Power Gain at VCE = 1 V, IC = 5 mA, f = 2 GHz
dB
3.0
4.0
–
|S21E|2
Insertion Power Gain at VCE = 1 V, IC = 15 mA, f = 2 GHz
dB
4.5
5.5
–
NF
Noise Figure at VCE = 1 V, IC = 10 mA, f = 2 GHz
dB
–
1.9
2.5
CRE
Reverse Transfer Capacitance3 at VCB = 0.5 V, IE = 0 mA, f = 1 MHz
pF
–
0.6
0.8
ICBO
Collector Cutoff Current at VCB = 5 V, IE = 0
nA
–
600
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
nA
–
600
hFE
DC Current Gain2 at VCE = 1 V, IC = 5 mA
100
120
145
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
≤ 350 s, duty cycle ≤ 2 %.
3. Collector to base capacitance when the emitter is grounded
DESCRIPTION
The NE851M13 transistor is designed for oscillator applica-
tions up to 3 GHz. The NE851M13 features low voltage
operation, low phase noise, and high immunty to pushing
effects. NEC's new low profile/flat lead style "M13" package is
ideal for today's portable wireless applications.
+0.1
–0.05
+0.1
–0.05
+0.1
–0.05
0.5
3
0.1
1
2
1.0
+0.1
–0.05
+0.1
–0.05
0.3
0.35
0.7
0.15
+0.1
–0.05
0.15
0.2
0.125
0.5±0.05
E
7
Bottom View
1
2
3
California Eastern Laboratories
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