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参数资料
| 型号： | 2SC5801 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | M13, 3 PIN |
| 文件页数： | 8/8页 |
| 文件大小： | 56K |
| 代理商： | 2SC5801 |
EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 (408) 988-3500 Telex 34-6393 FAX (408) 988-0279
Internet: http://WWW.CEL.COM
10/17/2001
DATA SUBJECT TO CHANGE WITHOUT NOTICE
SCHEMATIC
NONLINEAR MODEL
NE851M13
Base
Emitter
Collector
LBPKG
0.05 nH
LB
0.25 nH
LEPKG
0.05 nH
LE
0.45 nH
LCPKG
0.05 nH
CCBPKG
0.05 pF
CCB
0.01 pF
CCE
0.25 pF
CCEPKG
0.05 pF
Q1
Parameters
Q1
Parameters
Q1
IS
137e-18
MJC
0.14
BF
166
XCJC
0.5
NF
0.9871
CJS
0
VAF
20.4
VJS
0.75
IKF
50
MJS
0
ISE
80.4e-15
FC
0.55
NE
2.4
TF
15e-12
BR
28.7
XTF
0.1
NR
0.9889
VTF
2
VAR
2.7
ITF
0.03
IKR
0.021
PTF
0
ISC
532e-18
TR
1.0e-9
NC
1.28
EG
1.11
RE
0.45
XTB
0
RB
4
XTI
3
RBM
1
KF
170e-15
IRB
0
AF
1.65
RC
1.7
CJE
2.4e-12
VJE
0.87
MJE
0.34
CJC
0.65e-12
VJC
0.52
(1) Gummel-Poon Model
Parameters
NE851M13
CCB
0.01 pF
CCE
0.25 pF
LB
0.25 nH
LE
0.45 nH
CCBPKG
0.05 pF
CCEPKG
0.05 pF
LBX
0.05 nH
LCX
0.05 nH
LEX
0.05 nH
ADDITIONAL PARAMETERS
MODEL TEST CONDITIONS
Frequency:
0.1 to 5.0 GHz
Bias:
VCE = 1 V to 4 V, IC = 1 mA to 40 mA
Date:
09/2001
BJT NONLINEAR MODEL PARAMETERS(1)
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5808-TL-E | 制造商:SANYO 功能描述:NPN 400V 2.5A 20 to 50 TP-FA Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR NPN 700V 2.5A TO-251 制造商:Sanyo 功能描述:0 |
| 2SC5810(TE12L,F) | 功能描述:MOSFET Power Trans 100V 0.17V Vce 85ns RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SC581300L | 功能描述:TRANS NPN 80VCEO 1.5A MINI-3P RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SC5819(TE12L,F) | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR NPN 20V 1.5A SC-62 |
| 2SC582 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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