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参数资料
| 型号： | 2SC5859 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 23 A, 750 V, NPN, Si, POWER TRANSISTOR |
| 封装： | 2-21F2A, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 237K |
| 代理商： | 2SC5859 |
2SC5859
2006-11-22
1
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5859
HORIZONTAL DEFLECTION OUTPUT FOR
HDTV, DIGITAL TV, PROJECTION TV
High Voltage
: VCBO = 1700 V
Low Saturation Voltage
: VCE (sat) = 3 V (max)
High Speed
: tf(2) = 0.1 s (Typ.)
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
CollectorBase Voltage
VCBO
1700
V
CollectorEmitter Voltage
VCEO
750
V
EmitterBase Voltage
VEBO
5
V
DC
IC
23
Collector Current
Pulse
ICP
46
A
Base Current
IB
11.5
A
Collector Power Dissipation
PC
210
W
Junction Temperature
Tj
150
°C
Storage Temperature Range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-21F2A
Weight: 9.75 g (typ.)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5859(Q) | 制造商:Toshiba 功能描述:NPN Cut Tape |
| 2SC58630QL | 功能描述:TRANS NPN 300VCEO 70MA MINI-3 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SC5865 | 制造商:ROHM Semiconductor 功能描述:Semi, Bipolar, Transistor, ROHM, TSMT3, |
| 2SC5865TL | 制造商:Rohm 功能描述:NPN 60V 1A 120 to 390 TSMT3 Cut Tape 制造商:ROHM Semiconductor 功能描述:Semi, Bipolar, Transistor, ROHM, TSMT3, |
| 2SC5865TLQ | 功能描述:两极晶体管 - BJT NPN 60V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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