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参数资料
| 型号： | 2SC5957-N |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | 功率晶体管 |
| 英文描述： | 10 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | TO-220, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 29K |
| 代理商： | 2SC5957-N |
2SC5957
No.7613-1/4
Features
High breakdown voltage and high reliability.
High-speed switching.
Wide ASO.
Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
500
V
Collector-to-Emitter Voltage
VCEO
400
V
Emitter-to-Base Voltage
VEBO
7V
Collector Current
IC
10
A
Collector Current (Pulse)
ICP
PW
≤300s, duty cycle≤10%
20
A
Base Current
IB
3.5
A
Collector Dissipation
PC
1.75
W
Tc=25
°C50
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=400V, IE=0
10
A
Emitter Cutoff Current
IEBO
VEB=5V, IC=0
10
A
Continued on next page.
Ordering number : ENN7613
2SC5957
Switching Regulator Applications
Package Dimensions
unit : mm
2010C
[2SC5957]
31504KB TS IM TA-100659
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220
10.2
5.1
3.6
18.0
5.6
2.7
6.3
15.1
1.2
14.0
0.8
1.3
4.5
0.4
2.55
2.7
12
3
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5964-S-TD-E | 功能描述:两极晶体管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC5964-S-TD-H | 功能描述:两极晶体管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC5964-TD-E | 功能描述:两极晶体管 - BJT HIGH-CURRENT SWITCHING RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC5964-TD-H | 功能描述:两极晶体管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC5966-CA | 制造商:ON Semiconductor 功能描述: |
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