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参数资料
| 型号： | 2SC5999 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 25 A, 50 V, NPN, Si, POWER TRANSISTOR |
| 封装： | SMP-FD, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 37K |
| 代理商： | 2SC5999 |
2SC5999
No.8029-1/4
Applications
Relay drivers, lamp drivers, motor drivers, inverters.
Features
Adoption of MBIT process.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Surface mount type.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
120
V
Collector-to-Emitter Voltage
VCES
120
V
Collector-to-Emitter Voltage
VCEO
50
V
Emitter-to-Base Voltage
VEBO
6V
Collector Current
IC
25
A
Collector Current (Pulse)
ICP
40
A
Base Current
IB
2A
Collector Dissipation
PC
1.65
W
Tc=25
°C40
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=100V, IE=0
10
A
Emitter Cutoff Current
IEBO
VEB=4V, IC=0
10
A
DC Current Gain
hFE1VCE=2V, IC=1A
200
560
hFE2VCE=2V, IC=15A
150
Continued on next page.
Ordering number : ENN8029
D2404FA TS IM TB-00000425
2SC5999
NPN Epitaxial Planar Silicon Transistors
High-Current Switching Applications
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC5999 | 25 A, 50 V, NPN, Si, POWER TRANSISTOR |
| 2SC6011O | 15 A, 200 V, NPN, Si, POWER TRANSISTOR |
| 2SC6014 | 5000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC6014 | 5000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC6016 | 8 A, 30 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC6000 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:High Speed Switching Applications DC-DC Converter Applications |
| 2SC6000(TE16L1,NQ) | 制造商:Toshiba America Electronic Components 功能描述:Transistor NPN 50V 7A hfe250-400 13ns |
| 2SC6010 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon NPN Triple Diffused Type |
| 2SC6010(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC6010(T2MITUM,FM | 功能描述:TRANS NPN 1A 600V SC71 制造商:toshiba semiconductor and storage 系列:- 包装:散装 零件状态:停產 晶体管类型:NPN 电流 - 集电极（Ic）（最大值）:1A 电压 - 集射极击穿（最大值）:600V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:1V @ 75mA，600mA 电流 - 集电极截止（最大值）:100μA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:100 @ 100mA，5V 功率 - 最大值:1W 频率 - 跃迁:- 工作温度:150°C（TJ） 安装类型:通孔 封装/外壳:SC-71 供应商器件封装:MSTM 标准包装:1 |
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