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| 型号： | 2SC6017-TL |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 10000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | TP-FA, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 45K |
| 代理商： | 2SC6017-TL |
2SA2169 / 2SC6017
No.8275-1/5
Applications
Relay drivers, lamp drivers, motor drivers.
Features
Adoption of MBIT process.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Specifications ( ) : 2SA2169
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--50)100
V
Collector-to-Emitter Voltage
VCEO
(--)50
V
Emitter-to-Base Voltage
VEBO
(--)6
V
Collector Current
IC
(--)10
A
Collector Current (Pulse)
ICP
PW
≤100s
(--)13
A
Base Current
IB
(--)2
A
Collector Dissipation
PC
0.95
W
Tc=25
°C20
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)40V, IE=0
(--)10
A
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0
(--)10
A
DC Current Gain
hFE
VCE=(--)2V, IC=(--)1A
200
(560)700
Gain-Bandwidth Product
fT
VCE=(--)5V, IC=(--)1A
(130)200
MHz
Output Capacitance
Cob
VCB=(--)10V, f=1MHz
(90)60
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=(--)5A, IB=(--)250mA
(--290)180
(--580)360
mV
Base-to-Emitterr Saturation Voltage
VBE(sat)
IC=(--)5A, IB=(--)250mA
(--)0.93
(--)1.4
V
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8275
32505EA TS IM TB-00001269
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
2SA2169 / 2SC6017
PNP / NPN Epitaxial Planar Silicon Transistors
High-Current Switching
Applications
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC6017 | 10000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC6017-TL | 10000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC6017 | 10000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SA2169-TL | 10000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA2183 | 5 A, 60 V, PNP, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC6017-TL-E | 功能描述:两极晶体管 - BJT BIP NPN 10A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC6017-TL-EX | 制造商:ON Semiconductor 功能描述:BIP NPN 10A 50V - Tape and Reel |
| 2SC6019 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications |
| 2SC6020 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications |
| 2SC6021 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications |
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