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参数资料
| 型号： | 2SA2183 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 5 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 封装： | LEAD FREE, 2-10U1A, SC-67, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 198K |
| 代理商： | 2SA2183 |
2SA2183
2006-11-16
1
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2183
High Current Switching Applications
Low collector-emitter saturation : VCE(sat) = 1.0 V（max）
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
60
V
Emitter-base voltage
VEBO
7
V
DC
IC
5.0
A
Collector current
Pulse
ICP
8.0
A
Base current
IB
0.5
A
Ta = 25°C
2
W
Collector power
dissipation
Tc = 25°C
PC
20
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10U1A
Weight: 1.7 g (typ.)
1 : Base
2 : Collector
3 : Emitter
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| 2SA2200 | 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA2205 | 2000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA2205 | 2000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA2205-TL | 2000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA2183(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT PNP 50V 2A 3-Pin TSM |
| 2SA2186 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications |
| 2SA2186-AN | 功能描述:两极晶体管 - BJT BIP PNP 2A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA2188 | 制造商:ISAHAYA 制造商全称:Isahaya Electronics Corporation 功能描述:FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
| 2SA2192 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications |
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