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参数资料
| 型号： | 2SA2183 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 5 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 封装： | LEAD FREE, 2-10U1A, SC-67, 3 PIN |
| 文件页数： | 4/5页 |
| 文件大小： | 198K |
| 代理商： | 2SA2183 |
2SA2183
2006-11-16
4
Ambient temperature Ta (°C)
Pc – Ta
Collector
power
dissip
ation
P
C
(
W
)
0
16
4
12
20
100
120
160
①
Tc = Ta
Infinite heat sink
②
No heat sink
24
40
60
80
140
0.1
0.001
100
1
0.01
0.1
1
1000
0.1
1
10
100
1 ms*
10 ms*
V
CE
O
ma
x
100 μs*
8
①
②
10
100
10
100 ms*
rth – tw
Pulse width tw (s)
Collector-emitter voltage VCE (V)
Safe Operating Area
Colle
ct
or
curr
ent
I C
(A)
Curves should be applied in thermal limited area.
(single nonrepetitive pulse) Tc = 25 ℃
Infinite heat sink
T
ransie
nt
th
ermal
im
pedance
r th
(
°C
/W
)
*: Single pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
IC max (pulse)*
DC operation
Tc = 25 °C
IC max
(continuous)
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| 2SA2205 | 2000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA2183(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT PNP 50V 2A 3-Pin TSM |
| 2SA2186 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications |
| 2SA2186-AN | 功能描述:两极晶体管 - BJT BIP PNP 2A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA2188 | 制造商:ISAHAYA 制造商全称:Isahaya Electronics Corporation 功能描述:FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
| 2SA2192 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications |
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