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参数资料
| 型号： | 2SC6026MFV-GR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | 2-1L1A, VESM, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 143K |
| 代理商： | 2SC6026MFV-GR |
2SC6026MFV
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC6026MFV
General-Purpose Amplifier Applications
High voltage and high current
: VCEO = 50 V, IC = 150 mA (max)
Excellent hFE linearity :
hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
High hFE
: hFE = 120~400
Complementary to 2SA2154MFV
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
150
mA
Base current
IB
30
mA
Collector power dissipation
PC
150*
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change
in temperature, etc.) may cause this product to decrease in
the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* : Mounted on FR4 board (25.4 mm
× 25.4 mm × 1.6mm)
Mount Pad Dimensions (Reference)
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-1L1A
Weight: 0.0015 g (typ.)
VESM
1.BASE
2.EMITTER
3.COLLECTOR
1
2
3
0.80 ± 0.05
0.
32
±
0.
05
0.
22
±
0.
05
0.
8±
0.
05
0.
4
1.2 ± 0.05
1.
2±
0.
05
0.
13
±
0.0
5
0.
5±
0.
05
1
0.4
0.5
0.45
0.4
1.15
0.45
0.4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC6026MFV-GR(L3,T | 制造商:Toshiba 功能描述:TRANSISTOR |
| 2SC6026MFV-GR(TPL3 | 功能描述:两极晶体管 - BJT 150mA 50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC6026MFVGR,L3F | 功能描述:TRANS NPN 50V 0.15A VESM 制造商:toshiba semiconductor and storage 系列:- 包装:剪切带（CT） 零件状态:有效 晶体管类型:NPN 电流 - 集电极（Ic）（最大值）:150mA 电压 - 集射极击穿（最大值）:50V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:250mV @ 10mA，100mA 电流 - 集电极截止（最大值）:100nA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:200 @ 2mA，6V 功率 - 最大值:150mW 频率 - 跃迁:60MHz 安装类型:表面贴装 封装/外壳:SOT-723 供应商器件封装:VESM 标准包装:1 |
| 2SC6026MFV-Y | 功能描述:两极晶体管 - BJT INCORRECT MOUSER P/N RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC6026MFV-Y(TPL3) | 功能描述:两极晶体管 - BJT 150mA 50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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