参数资料
型号: 2SC6034
元件分类: 小信号晶体管
英文描述: 1000 mA, 285 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封装: LEAD FREE, 2-7D101A, 3 PIN
文件页数: 1/4页
文件大小: 212K
代理商: 2SC6034
2SC6034
2006-11-13
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC6034
High-Speed, High-Voltage Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
High-speed switching: tf = 0.24 s (max) (IC = 0.3 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
600
V
Collector-emitter voltage
VCEO
285
V
Emitter-base voltage
VEBO
8
V
DC
IC
1.0
Collector current
Pulse
ICP
2.0
A
Base current
IB
0.5
A
Collector power
dissipation
Ta = 25°C
PC
1.0
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-7D101A
Weight: 0.2 g (typ.)
Base
Collector
Emitter
1.
2.
3.
相关PDF资料
PDF描述
2SC6037G 500 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC6044 2 A, 30 V, NPN, Si, POWER TRANSISTOR
2SC605(B)M VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC606(B)V VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC605(B)K VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
2SC6034(F) 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 285V 1A 3-Pin MSTM
2SC6034(TPF2,F) 制造商:Toshiba America Electronic Components 功能描述:Transitor,BIP Tr.,Vceo=300V,Ic=1A,MSTM
2SC6036 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type
2SC603600L 功能描述:TRANS NPN 12VCEO 500MA SSSMINI-3 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)(最大):1A 电压 - 集电极发射极击穿(最大):30V Ib、Ic条件下的Vce饱和度(最大):200mV @ 100mA,1A 电流 - 集电极截止(最大):100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR
2SC6036G0L 功能描述:TRANS NPN 12VCEO 500MA SSSMINI-3 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)(最大):1A 电压 - 集电极发射极击穿(最大):30V Ib、Ic条件下的Vce饱和度(最大):200mV @ 100mA,1A 电流 - 集电极截止(最大):100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR