参数资料
型号: 2SC6065
元件分类: 小信号晶体管
英文描述: 1500 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封装: NMP, 3 PIN
文件页数: 1/4页
文件大小: 33K
代理商: 2SC6065
2SC6065
No.8561-1/4
Features
High breakdown voltage.
High-speed switching.
Wide ASO.
Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
500
V
Collector-to-Emitter Voltage
VCEO
400
V
Emitter-to-Base Voltage
VEBO
8V
Collector Current
IC
1.5
A
Collector Current (Pulse)
ICP
PW
≤300s, duty cycle≤10%
3
A
Base Current
IB
0.7
A
Collector Dissipation
PC
0.9
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=400V, IE=0A
10
A
Emitter Cutoff Current
IEBO
VEB=5V, IC=0A
10
A
hFE1VCE=5V, IC=0.1A
20
50
DC Current Gain
hFE2VCE=5V, IC=0.7A
10
hFE3VCE=5V, IC=1mA
10
Continued on next page.
Ordering number : EN8561
12006CB MS IM TB-00001637
2SC6065
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
Switching Regulator Applications
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