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参数资料
| 型号： | 2SC6072 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 A, 180 V, NPN, Si, POWER TRANSISTOR |
| 封装： | LEAD FREE, SC-67, 2-10U1A, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 181K |
| 代理商： | 2SC6072 |
2SC6072
2007-06-07
1
TOSHIBA Multi-chip Device Silicon NPN Epitaxial Transistor Type
2SC6072
Power Amplifier Applications
Driver Stage Amplifier Applications
·
High transition frequency: fT = 200 MHz (typ.)
Absolute Maximum Ratings (Tc = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
180
V
Collector-emitter voltage
VCEO
180
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
2.0
A
Base current
IB
1.0
A
Ta
= 25°C
2.0
W
Collector power dissipation
Tc
= 25°C
PC
20
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Electrical Characteristics (Tc = 25°C)
Characteristic
Symbol
Test Conditions
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 180 V, IE = 0
5.0
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
5.0
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
180
V
hFE (1)
VCE = 5 V, IC = 0.1 A
100
320
DC current gain
hFE (2)
VCE = 5 V, IC = 1 A
50
Collector-emitter saturation voltage
VCE (sat)
IC = 1 A, IB = 0.1 A
0.16
1.0
V
Base-emitter voltage
VBE
VCE = 5 V, IC = 1 A
1.5
V
Transition frequency
fT
VCE = 5 V, IC = 0.3 A
200
MHZ
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1MHZ
16
pF
Unit: mm
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10U1A
Weight: 1.7 g (typ.)
1 : BASE
2 : COLLECTOR
3 : EMITTER
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| 2SC6076 | 3 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 2SC6077 | 3 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 2SC6084 | 5 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SC6091 | 8 A, 700 V, NPN, Si, POWER TRANSISTOR |
| 2SC6095 | 2500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC6072(Q) | 制造商:Toshiba 功能描述:NPN 制造商:Toshiba 功能描述:NPN Bulk 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR NPN 180V 2A TO220SIS |
| 2SC6075 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Type |
| 2SC6076 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Type (PCT Process) |
| 2SC6076(TE16L1,NQ) | 制造商:Toshiba 功能描述:Cut Tape 制造商:Toshiba America Electronic Components 功能描述:Transistor NPN 80V 3A hfe180-450 0.4us |
| 2SC6076(TE16L1,NV) | 功能描述:TRANS NPN 80V 3A PW MOLD 制造商:toshiba semiconductor and storage 系列:- 包装:剪切带（CT） 零件状态:有效 晶体管类型:NPN 电流 - 集电极（Ic）（最大值）:3A 电压 - 集射极击穿（最大值）:80V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:500mV @ 100mA，1A 电流 - 集电极截止（最大值）:1μA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:180 @ 500mA，2V 功率 - 最大值:10W 频率 - 跃迁:150MHz 安装类型:表面贴装 封装/外壳:TO-252-3，DPak（2 引线+接片），SC-63 供应商器件封装:PW-MOLD 标准包装:1 |
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