参数资料
型号: 2SC6075
元件分类: 功率晶体管
英文描述: 2.5 A, 80 V, NPN, Si, POWER TRANSISTOR
封装: LEAD FREE, 2-8M1A, 3 PIN
文件页数: 1/5页
文件大小: 168K
代理商: 2SC6075
2SC6075
2007-06-07
1
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6075
Power Amplifier Applications
Power Switching Applications
Low collector emitter saturation voltage
: VCE (sat) = 0.5 V (max)(IC = 1A)
High-speed switching: tstg = 0.4 μs (typ)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
160
V
VCEX
160
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
9
V
DC
IC
2.5
A
Collector current
Pulse
ICP
5.0
A
Base current
IB
1.0
A
Collector power dissipation
PC
1.3
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-8M1A
Weight:0.55g(typ)
1 : EMITTER
2 : COLLECTOR
3 : BASE
相关PDF资料
PDF描述
2SC6080 13 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2SC6092LS 8 A, 700 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2SC6092LS 8 A, 700 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2SC6098 SMALL SIGNAL TRANSISTOR
2SC6099 2000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR
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