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参数资料
| 型号： | 2SC6080 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 13 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | TO-220ML, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 40K |
| 代理商： | 2SC6080 |
2SC6080
No. A0277-1/4
Applications
High-speed switching applications (switching regulator, driver circuit).
Features
Adoption of MBIT process.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
60
V
Collector-to-Emitter Voltage
VCES
60
V
Collector-to-Emitter Voltage
VCEO
50
V
Emitter-to-Base Voltage
VEBO
6V
Collector Current
IC
13
A
Collector Current (Pulse)
ICP
PW
≤10s, duty cycle≤10%
15
A
Base Current
IB
2A
Collector Dissipation
PC
2W
Tc=25
°C25
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=40V, IE=0A
10
A
Emitter Cutoff Current
IEBO
VEB=4V, IC=0A
10
A
DC Current Gain
hFE1VCE=2V, IC=270mA
200
560
hFE2VCE=2V, IC=8.1A
50
Continued on next page.
Ordering number : ENA0277
72606 / 31506FA MS IM TB-00002091
2SC6080
NPN Epitaxial Planar Silicon Transistor
50V / 13A High-Speed Switching
Applications
SANYO Semiconductors
DATA SHEET
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
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| 2SC6098 | SMALL SIGNAL TRANSISTOR |
| 2SC6099 | 2000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC6081 | 功能描述:TRANS NPN 50V 5A TO-220ML RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SC6082 | 功能描述:两极晶体管 - BJT BIP NPN 15A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC6082-1E | 制造商:ON Semiconductor 功能描述:BIP NPN 15A 50V - Ammo Pack 制造商:ON Semiconductor 功能描述:FNFLD / BIP NPN 15A 50V |
| 2SC6082-1EX | 制造商:ON Semiconductor 功能描述:BIP NPN 15A 50V |
| 2SC6082-EPN-1E | 制造商:ON Semiconductor 功能描述:BIP NPN 15A 50V - Ammo Pack 制造商:ON Semiconductor 功能描述:FNFLD - BIP NPN 15A 50V |
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