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参数资料
| 型号： | 2SC6099-TL |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | TP-FA, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 39K |
| 代理商： | 2SC6099-TL |
2SC6099
No. A0435-1/4
Applications
DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter.
Features
Adoption of FBET, MBIT process.
High current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
High allowable power dissipation.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
120
V
Collector-to-Emitter Voltage
VCES
120
V
Collector-to-Emitter Voltage
VCEO
100
V
Emitter-to-Base Voltage
VEBO
6.5
V
Collector Current
IC
2A
Collector Current (Pulse)
ICP
3A
Base Current
IB
400
mA
Collector Dissipation
PC
0.8
W
Tc=25
°C15
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=80V, IE=0A
1
A
Emitter Cutoff Current
IEBO
VEB=4V, IC=0A
1
A
DC Current Gain
hFE
VCE=5V, IC=100mA
300
600
Continued on next page.
Ordering number : ENA0435
82306 / 62006EA MS IM TB-00002424
2SC6099
NPN Epitaxial Planar Silicon Transistor
High-Voltage Switching Applications
SANYO Semiconductors
DATA SHEET
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
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相关代理商/技术参数 |
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|---|---|
| 2SC6099-TL-E | 功能描述:两极晶体管 - BJT BIP NPN 2A 100V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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| 2SC6101 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications |
| 2SC6102 | 制造商:SANYO 功能描述:NPN 30V 0.5A 200 to 560 TO126 Bulk 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR NPN 30V 7A TO-126 |
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