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参数资料
| 型号： | 2SC6099-TL |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | TP-FA, 3 PIN |
| 文件页数： | 4/4页 |
| 文件大小： | 39K |
| 代理商： | 2SC6099-TL |
2SC6099
No. A0435-4/4
PS
Collector
Dissipation,
P
C
-
W
PC -- Ta
Collector
Dissipation,
P
C
-
W
PC -- Tc
Ambient Temperature, Ta --
°C
Case Temperature, Tc --
°C
A S O
Collector
Current,
I
C
--
A
Collector-to-Emitter Voltage, VCE -- V
17.5
0
15.0
12.5
10.0
7.50
5.00
2.50
20
060
40
80
100
140
120
160
IT11132
0
0.9
0.7
0.8
0.6
0.5
0.4
0.3
0.2
0.1
20
060
40
80
100
140
120
160
IT11131
0.01
2
0.1
7
5
3
2
1.0
7
5
3
5
3
1.0
0.1
2
25
37
10
2
5
37
IT11130
<10s
100
s
ICP=3A
IC=2A
100
2
5
37
100ms
10ms
1ms
500
s
DC
operation
Tc=25
°C
Single Pulse
This catalog provides information as of June, 2006. Specifications and information herein are subject
to change without notice.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC6099-TL-E | 功能描述:两极晶体管 - BJT BIP NPN 2A 100V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC6100 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:High-Speed Switching Applications DC-DC Converter Applications Strobe Applications |
| 2SC6100(TE85L) | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 50V 2.5A 3-Pin UFM T/R |
| 2SC6101 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications |
| 2SC6102 | 制造商:SANYO 功能描述:NPN 30V 0.5A 200 to 560 TO126 Bulk 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR NPN 30V 7A TO-126 |
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