参数资料
型号: 2SC6080
元件分类: 功率晶体管
英文描述: 13 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封装: TO-220ML, 3 PIN
文件页数: 4/4页
文件大小: 40K
代理商: 2SC6080
2SC6080
No. A0277-4/4
PS
Collector-to-Emitter Voltage, VCE -- V
Collector
Current,
I
C
-
A
Forward Bias A S O
Ambient Temperature, Ta --
°C
Collector
Dissipation,
P
C
-
W
PC -- Ta
Case Temperature, Tc --
°C
Collector
Dissipation,
P
C
-
W
PC -- Tc
20
060
40
80
100
140
120
160
0
5
10
15
20
25
30
IT10561
0
0.5
1.0
2.0
1.5
2.5
0.01
0.1
2
7
5
3
2
1.0
2
7
5
3
10
2
7
5
3
1.0
0.1
2
25
37
100
25
37
10
5
37
ICP=15A
IC=13A
IT10559
20
060
40
80
100
120
140
160
IT10560
DC
operation
P
T =500
s
100ms
10ms
1ms
Tc=25
°C
Single pulse
No
heat
sink
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相关PDF资料
PDF描述
2SC6092LS 8 A, 700 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2SC6092LS 8 A, 700 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2SC6098 SMALL SIGNAL TRANSISTOR
2SC6099 2000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC6099-TL 2000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
2SC6081 功能描述:TRANS NPN 50V 5A TO-220ML RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)(最大):1A 电压 - 集电极发射极击穿(最大):30V Ib、Ic条件下的Vce饱和度(最大):200mV @ 100mA,1A 电流 - 集电极截止(最大):100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR
2SC6082 功能描述:两极晶体管 - BJT BIP NPN 15A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SC6082-1E 制造商:ON Semiconductor 功能描述:BIP NPN 15A 50V - Ammo Pack 制造商:ON Semiconductor 功能描述:FNFLD / BIP NPN 15A 50V
2SC6082-1EX 制造商:ON Semiconductor 功能描述:BIP NPN 15A 50V
2SC6082-EPN-1E 制造商:ON Semiconductor 功能描述:BIP NPN 15A 50V - Ammo Pack 制造商:ON Semiconductor 功能描述:FNFLD - BIP NPN 15A 50V