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参数资料
| 型号： | 2SC6079 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | LEAD FREE, 2-7D101A, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 188K |
| 代理商： | 2SC6079 |
2SC6079
2007-06-07
1
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6079
Power Amplifier Applications
Power Switching Applications
Low collector saturation voltage: VCE (sat) = 0.5 V (max)（IC = 1A）
High-speed switching: tstg = 0.4 μs (typ)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
160
V
Collector-emitter voltage
VCEX
160
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
9
V
DC
IC
2.0
A
Collector current
Pulse
ICP
4.0
A
Base current
IB
1.5
A
Collector power dissipation
PC
1
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55～150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-7D101A
Weight:0.2g(typ)
1 : BASE
2 : COLLECTOR
3 : EMITTER
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC6080 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:NPN Epitaxial Planar Silicon Transistor 50V / 13A High-Speed Switching |
| 2SC6081 | 功能描述:TRANS NPN 50V 5A TO-220ML RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SC6082 | 功能描述:两极晶体管 - BJT BIP NPN 15A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC6082-1E | 制造商:ON Semiconductor 功能描述:BIP NPN 15A 50V - Ammo Pack 制造商:ON Semiconductor 功能描述:FNFLD / BIP NPN 15A 50V |
| 2SC6082-1EX | 制造商:ON Semiconductor 功能描述:BIP NPN 15A 50V |
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