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参数资料
| 型号： | 2SC6083A |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SPA, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 52K |
| 代理商： | 2SC6083A |
2SC6083A
No. A0900-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=0.5A, IB=0.1A
0.8
V
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=0.5A, IB=0.1A
1.5
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=1mA, IE=0A
700
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=5mA, RBE=∞
400
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=1mA, IC=0A
8
V
Turn-ON Time
ton
IC=0.5A, IB1=0.05A, IB2=--0.5A, RL=400Ω, VCC=200V
1.0
μs
Storage Time
tstg
IC=0.5A, IB1=0.05A, IB2=--0.5A, RL=400Ω, VCC=200V
2.5
μs
Fall Time
tf
IC=0.5A, IB1=0.05A, IB2=--0.5A, RL=400Ω, VCC=200V
0.3
μs
Package Dimensions
Switching Time Test Circuit
unit : mm (typ)
7524-004
VR
RB
VCC=200V
VBE= --5V
++
50Ω
INPUT
OUTPUT
RL
100μF
470μF
PW=20μs
IB1
D.C.≤1%
IB2
12
3
4.0
3.8
3.0
2.2
0.7
0.6
0.4
0.5
3.0
1.8
15.0
1.3
1 : Emitter
2 : Collector
3 : Base
SANYO : SPA
Collector-to-Emitter Voltage, VCE -- V
Collector
Current,
I
C
-
A
Base-to-Emitter Voltage, VBE -- V
IC -- VBE
Collector
Current,
I
C
-
A
IC -- VCE
0
24
6
8
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
10
0.2
0.4
0.6
0.8
1.0
1.2
01.4
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
IT12797
IT12798
25
°C
Ta
=
120
°C
--40
°C
IB=0mA
10mA
20mA
30mA
40mA
50mA
60mA
70mA
80mA
90mA
200mA
VCE=5V
150mA
100mA
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