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参数资料
| 型号： | 2SC6118LS |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | 功率晶体管 |
| 英文描述： | 8 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | TO-220FI(LS), 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 47K |
| 代理商： | 2SC6118LS |
2SC6118LS
No. A0578-3/4
0
20
40
60
80
100
120
140
160
2.5
2.0
1.5
1.0
0.5
25
30
35
20
15
10
5
0
20
40
60
80
100
120
140
160
40
IT11898
IT11894
IT11899
IT11900
0.001
0.01
2
3
5
2
3
5
7
2
0.1
3
5
7
2
1.0
2
3
5
7
1.0
2
3
5
3
7
10
0.1
10
23
2
5
57 100
32
3
57 1000
10
100
1000
35 7
23
5 7
23
5 7
2
No
heat
sink
300
s
1ms
10ms
DC
operation
ICP=20A
IC=8A
100
s
1.0
3
5
7
2
10
3
5
7
L=500
H
IB2= --1.0A
Tc=25
°C
Single pulse
Reverse Bias A S O
Collector
Current,
I
C
-
A
Collector-to-Emitter Voltage, VCE -- V
Collector
Current,
I
C
-
A
Forward Bias A S O
Ambient Temperature, Ta --
°C
Collector
Dissipation,
P
C
-
W
Case Temperature, Tc --
°C
Collector
Dissipation,
P
C
-
W
PC -- Tc
Tc=25
°C
Single pulse
Collector-to-Emitter Voltage, VCE -- V
PC -- Ta
IT11890
0.1
1.0
10
0.1
7
5
3
2
7
5
3
2
5
1.0
23
7
5
10
23
7
VCC=200V
IC / IB1=5
IB2 / IB1=2
R load
tstg
tf
IT11891
VCC=200V
IC=3A
IB1=0.6A
R load
tstg
tf
0.1
1.0
10
0.1
7
5
3
2
7
5
3
2
5
1.0
23
7
5
10
23
7
Collector Current, IC -- A
Switching
T
ime,
SW
T
ime
-
s
SW Time -- IC
SW Time -- IB2
Base Current, IB2 -- A
Switching
T
ime,
SW
T
ime
-
s
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC6120 | 制造商:ISAHAYA 制造商全称:Isahaya Electronics Corporation 功能描述:FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE |
| 2SC6120_10 | 制造商:ISAHAYA 制造商全称:Isahaya Electronics Corporation 功能描述:FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE |
| 2SC6124 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Power Amplifier Applications Power Switching Applications |
| 2SC6124(TE12L,F) | 制造商:Toshiba America Electronic Components 功能描述:Transistor NPN 80V 2A hfe100-200 150ns |
| 2SC6125 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:High-Speed Switching Applications Power Amplifier Applications |
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