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参数资料
| 型号： | 2SCR522MT2L |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | VMT3, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 166K |
| 代理商： | 2SCR522MT2L |
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2010 ROHM Co., Ltd. All rights reserved.
2010.09 - Rev.A
General purpose transistor(20V,0.2A)
2SCR522M / 2SCR522EB / 2SCR522UB
Structure
Dimensions (Unit : mm)
NPN silicon epitaxial planar transistor
Features
Complements the 2SAR522M / 2SAR522EB / 2SAR522UB.
Applications
Switch, LED driver
Packaging specifications
Packaging Type
Code
Taping
Basic ordering
unit (pieces)
T2L
8000
Taping
TL
3000
Taping
TL
3000
2SCR522M
2SCR522EB
2SCR522UB
Package
VMT3
EMT3F
UMT3F
Type
Absolute maximum ratings (Ta=25
C)
Inner circuit
Symbol
Limits
Unit
VCBO
20
V
20
V
VCEO
VEBO
5
mA
400
IC
ICP
mA
200
Tj
150
°C
Tstg
55 to +150
°C
PD
200
150
mW
1
2
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Range of storage temperature
Power
dissipation
1 Pw=1mS Single pulse
2 Each terminal mounted on a recommended land
Parameter
2SCR522M,2SCR522EB
2SCR522UB
Electrical characteristics (Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE(sat)
fT
Cob
20
5
400
0.12
2
0.1
0.30
V
μA
V
MHz
pF
IC
=50μA
IC
=1mA
IE
=50μA
VCB
=20V
VEB
=5V
IC
=100mA, IB=10mA
hFE
120
560
VCE
=10V, IE=10mA, f=100MHz
VCE
=2V, IC=1mA
VCB
=10V, IE=0A, f=1MHz
Output capacitance
Transition frequency
Collector-emitter saturation voltage
Emitter cut-off current
Collector cut-off current
Emitter-base breakdown voltage
Collector-emitter breakdown voltage
Collector-base breakdown voltage
DC current gain
VMT3
EMT3F
(1)
(2)
(3)
UMT3F
2.0
0.32
0.65
1.3
2.1
1.25
0.425
(1)
(2)
(3)
0.9
0.53
0.13
Abbreviated symbol : NC
(1)
(3)
(2)
(1) Base
(2) Emitter
(3) Collector
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SCR522UB | 制造商:ROHM 制造商全称:Rohm 功能描述:General purpose transistor(20V,0.2A) |
| 2SCR522UBTL | 功能描述:两极晶体管 - BJT Trans GP BJT NPN 20V 0.2A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SCR523EB | 制造商:ROHM 制造商全称:Rohm 功能描述:General purpose transistor(50V,0.1A) |
| 2SCR523EBTL | 制造商:ROHM Semiconductor 功能描述: |
| 2SCR523M | 制造商:ROHM 制造商全称:Rohm 功能描述:General purpose transistor(50V,0.1A) |
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