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| 型号： | 2SCR533DTL |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | CPT3, SC-63, 3 PIN |
| 文件页数： | 6/6页 |
| 文件大小： | 486K |
| 代理商： | 2SCR533DTL |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SCR533P | 制造商:ROHM 制造商全称:Rohm 功能描述:Midium Power Transistors (50V / 3A) |
| 2SCR533P_09 | 制造商:ROHM 制造商全称:Rohm 功能描述:Midium Power Transistors (50V / 3A) |
| 2SCR533P5T100 | 功能描述:NPN 50V 3A MEDIUM POWER TRANSIST 制造商:rohm semiconductor 系列:- 包装:剪切带（CT） 零件状态:在售 晶体管类型:NPN 电流 - 集电极（Ic）（最大值）:3A 电压 - 集射极击穿（最大值）:50V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:350mV @ 50mA，1A 电流 - 集电极截止（最大值）:1μA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:180 @ 50mA，3V 功率 - 最大值:500mW 频率 - 跃迁:320MHz 工作温度:150°C（TJ） 安装类型:表面贴装 封装/外壳:TO-243AA 供应商器件封装:MPT3 标准包装:1 |
| 2SCR533PFRAT100 | 功能描述:NPN DRIVER TRANSISTOR (CORRESPON 制造商:rohm semiconductor 系列:汽车级，AEC-Q101 零件状态:在售 晶体管类型:NPN 电流 - 集电极（Ic）（最大值）:3A 电压 - 集射极击穿（最大值）:50V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:350mV @ 50mA，1A 电流 - 集电极截止（最大值）:1μA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:180 @ 50mA，3V 功率 - 最大值:500mW 频率 - 跃迁:320MHz 工作温度:150°C（TJ） 安装类型:表面贴装 封装/外壳:TO-243AA 供应商器件封装:MPT3 标准包装:1 |
| 2SCR533PT100 | 功能描述:开关晶体管 - 偏压电阻器 NPN 50V 3A Transistor RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
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