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参数资料
| 型号： | 2SD0592S |
| 英文描述： | TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 1A I(C) | TO-226 |
| 中文描述： | 晶体管|晶体管|叩| 25V的五（巴西）总裁| 1A条一（c）|至226 |
| 文件页数： | 1/4页 |
| 文件大小： | 89K |
| 代理商： | 2SD0592S |
Transistors
2SD0592A
(2SD592A)
Silicon NPN epitaxial planar type
1
Publication date: January 2003
SJC00189CED
Rank
Q
R
S
h
FE1
85 to 170
120 to 240
170 to 340
For low-frequency output amplification
Complementary to 2SB0621A (2SB621A)
■
Features
Large collector power dissipation P
C
Low collector-emitter saturation voltage V
CE(sat)
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
V
CEO
60
V
Collector-emitter voltage (Base open)
50
V
Emitter-base voltage (Collector open)
V
EBO
5
V
Collector current
I
C
I
CP
1
A
Peak collector current
1.5
A
Collector power dissipation
P
C
750
mW
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CB
=
20 V, I
E
=
0
V
CE
=
10 V, I
C
=
500
mA
V
CE
=
5
V, I
C
=
1 A
I
C
=
500 mA, I
B
=
50 mA
I
C
=
500 mA, I
B
=
50 mA
V
CB
=
10 V, I
E
=
50 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
60
V
Collector-emitter voltage (Base open)
V
CEO
V
EBO
50
V
Emitter-base voltage (Collector open)
5
V
Collector-base cutoff current (Emitter open)
I
CBO
h
FE1
*
h
FE2
0.1
μ
A
Forward current transfer ratio
85
340
50
Collector-emitter saturation voltage
V
CE(sat)
0.2
0.4
V
Base-emitter saturation voltage
V
BE(sat)
f
T
C
ob
0.85
1.20
V
Transition frequency
200
MHz
Collector output capacitance
(Common base, input open circuited)
20
pF
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Unit: mm
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
5.0
±
0.2
0.7
±
0.1
0.45
+0.15
2.5
+0.6
0.45
+0.15
2.5
1
2 3
+0.6
4.0
±
0.2
5
±
0
1
±
0
2
±
0
0
±
0
Note) The part number in the parenthesis shows conventional part number.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD592S | TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 1A I(C) | TO-226 |
| 2SD592R | TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 1A I(C) | TO-226 |
| 2SD592Q | TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 1A I(C) | TO-226 |
| 2SD592AS | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1A I(C) | TO-226 |
| 2SD592AR | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1A I(C) | TO-226 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD0601 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer type |
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| 2SD0601A(2SD601A) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:小信号デバイス － 小信号トランジスタ － 汎用低周波増幅 |
| 2SD0601A0L | 功能描述:TRANS NPN GP AMP 50VCEO MINI 3P RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
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