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参数资料
| 型号： | 2SD0602AS |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封装： | MINI3-G1, SC-59, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 174K |
| 代理商： | 2SD0602AS |
544
Transistor
2SD0602, 2SD0602A (2SD602, 2SD602A)
Silicon NPN epitaxial planer type
For general amplification
Complementary to 2SB0710 (2SB710) and 2SB0710A (2SB710A)
s Features
q
Low collector to emitter saturation voltage VCE(sat).
q
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s Absolute Maximum Ratings (Ta=25C)
Unit: mm
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Emitter
EIAJ:SC–59
3:Collector
Mini3-G1 Package
0.40
+0.10
0.05
(0.65)
1.50
+0.25 -0.05
2.8
+0.2 -0.3
2
1
3
(0.95) (0.95)
1.9±0.1
2.90
+0.20
-0.05
0.16
+0.10
-0.06
0.4
±0.2
5
°
10
°
0
to
0.1
1.1
+0.2 -0.1
1.1
+0.3 -0.1
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
30
60
25
50
5
1
500
200
150
–55 ~ +150
Unit
V
A
mA
mW
C
2SD0602
2SD0602A
2SD0602
2SD0602A
s Electrical Characteristics (Ta=25C)
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
VCBO
VCEO
VEBO
hFE1
*1
hFE2
VCE(sat)
fT
Cob
Conditions
VCB = 20V, IE = 0
IC = 10A, IE = 0
IC = 10mA, IB = 0
IE = 10A, IC = 0
VCE = 10V, IC = 150mA
*2
VCE = 10V, IC = 500mA
*2
IC = 300mA, IB = 30mA
*2
VCB = 10V, IE = –50mA
*2, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
min
30
60
25
50
5
85
40
typ
160
0.35
200
6
max
0.1
340
0.6
15
Unit
A
V
MHz
pF
*2 Pulse measurement
2SD0602
2SD0602A
2SD0602
2SD0602A
*1h
FE1 Rank classification
Rank
Q
R
S
hFE1
85 ~ 170
120 ~ 240
170 ~ 340
2SD0602
WQ
WR
WS
2SD0602A
XQ
XR
XS
Marking symbol :
W(2SD0602)
X(2SD0602A)
Marking
Symbol
Note.) The Part numbers in the Parenthesis show
conventional part number.
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Please
visit
following
URL
about
latest
information.
http://panasonic.co.jp/semicon/e-index.html
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| 2SD602R | 500 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 2SD0602AQ | 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 2SD0637Q | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD0602ASL | 功能描述:TRANS NPN GP AMP 50VCEO MINI 3P RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SD0602Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 500MA I(C) | TO-236AB |
| 2SD0602R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 500MA I(C) | TO-236AB |
| 2SD0602S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 500MA I(C) | TO-236AB |
| 2SD0637(2SD637) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:2SD0637 (2SD637) - NPN Transistor |
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