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参数资料
| 型号： | 2SD0874A |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Silicon NPN epitaxial planar type |
| 中文描述： | 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, MINIP3-F1, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 90K |
| 代理商： | 2SD0874A |
Transistors
2SD0874, 2SD0874A
(2SD874, 2SD874A)
Silicon NPN epitaxial planar type
1
Publication date: November 2002
SJC00197CED
For low-frequency power amplification
Complementary to 2SB0766 (2SB766) and 2SB0766A (2SB766A)
■
Features
Large collector power dissipation P
C
Low collector-emitter saturation voltage V
CE(sat)
Mini power type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine packing
■
Absolute Maximum Ratings
T
a
=
25
°
C
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
4.5
±
0.1
1.6
±
0.2
3.0
±
0.15
45
2
±
0
0
1.5
±
0.1
4
2
±
0
3
+
–
1
+
–
0.5
±
0.08
0.4
±
0.04
0.4
±
0.08
1
2
3
1.5
±
0.1
3
Unit: mm
1: Base
2: Collector
3: Emitter
MiniP3-F1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
h
FE1
85 to 170
120 to 240
170 to 340
Marking Symbol:
2SD0874: Z
2SD0874A: Y
Parameter
Symbol
Rating
Unit
Collector-base voltage
(Emitter open)
2SD0874
V
CBO
30
V
2SD0874A
60
Collector-emitter voltage
(Base open)
2SD0874
V
CEO
25
V
2SD0874A
50
Emitter-base voltage (Collector open)
V
EBO
5
V
Collector current
I
C
1
A
Peak collector current
I
CP
P
C
1.5
A
Collector power dissipation
*
1
W
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage
(Emitter open)
2SD0874
V
CBO
I
C
=
10
μ
A, I
E
=
0
30
V
2SD0874A
60
Collector-emitter voltage
(Base open)
2SD0874
V
CEO
I
C
=
2 mA, I
B
=
0
25
V
2SD0874A
50
Emitter-base voltage (Collector open)
V
EBO
I
E
=
10
μ
A, I
C
=
0
V
CB
=
20 V, I
E
=
0
V
CE
=
10 V, I
C
=
500 mA
V
CE
=
5 V, I
C
=
1 A
I
C
=
500 mA, I
B
=
50 mA
I
C
=
500 mA, I
B
=
50 mA
V
CB
=
10 V, I
E
=
50 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
5
V
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*1
I
CBO
h
FE1
*2
0.1
μ
A
85
340
h
FE2
50
Collector-emitter saturation voltage
*1
Base-emitter saturation voltage
*1
V
CE(sat)
V
BE(sat)
0.2
0.4
V
0.85
1.2
V
Transition frequency
f
T
C
ob
200
MHz
Collector output capacitance
(Common base, input open circuited)
20
pF
Note)*: Printed circuit board: Copper foil area of 1 cm
2
or more, and the
board thickness of 1.7 mm for the collector portion
Note) The part numbers in the parenthesis show conventional part number.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD0875 | For Low-Frequency Power Amplification |
| 2SD0958 | For Low-Frequency And Low-Noise Amplification |
| 2SD0965 | Silicon NPN epitaxial planar type |
| 2SD0966 | For Low-Frequency Amplification |
| 2SD966 | For Low-Frequency Amplification |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD0874A(2SD874A) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:小信号デバイス － 小信号トランジスタ － 汎用低周波増幅 |
| 2SD0874A0L | 功能描述:TRANS NPN LF 50VCEO 1A MINI-PWR RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SD0874AQ | 制造商:未知厂家 制造商全称:未知厂家 功能描述:BJT |
| 2SD0874AR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:BJT |
| 2SD0874AS | 制造商:未知厂家 制造商全称:未知厂家 功能描述:BJT |
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