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参数资料
| 型号： | 2SD1012H |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 700 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SPA, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 103K |
| 代理商： | 2SD1012H |
2SB808/2SD1012
No.676—2/5
* : The 2SB808/2SD1012 are classified by 50mA hFE as follows :
2SB808
2SD1012
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Continued from preceding page.
--800
--700
--600
--500
--400
--300
--200
--100
0
0--0.1
--0.2
--0.3
--0.4
--0.5
IC -- VCE
IB=0
ITR08383
IB -- VBE
0
20
40
60
80
100
00.2
0.4
0.6
0.8
1.0
ITR08385
--1mA
--2mA
--6mA
2SB808
2SD1012
VCE=5V
(For PNP, minus sign is omitted.)
--10mA
--30mA
--50mA
800
700
600
500
400
300
200
100
0
00.1
0.2
0.3
0.4
0.5
IC -- VCE
IB=0
ITR08384
1mA
2mA
4mA
6mA
2SD1012
10mA
50mA
C
f T -- IC
100
10
1.0
2
7
5
3
1000
2
7
5
3
23
5
7
10
23
5
100
ITR08386
2SB808
2SD1012
VCE=10V
Collector
Current,
I C
—
mA
Collector-to-Emitter Voltage, VCE — V
Collector
Current,
I C
—
mA
Collector-to-Emitter Voltage, VCE — V
Base
Current,
I B
—
A
Base-to-Emitter Voltage, VBE — V
Gain-Bandwidth
Product,
f T
—
MHz
Collector Current, IC — mA
(For PNP, minus sign is omitted.)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD1012-H | 700 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1012F | 700 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SB808 | 700 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1018M | 4 A, 250 V, NPN, Si, POWER TRANSISTOR |
| 2SD1018 | 4 A, 250 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1015 | 制造商:SONY 制造商全称:Sony Corporation 功能描述:SILICON NPN LEC SYMMETRY TRANSISTOR |
| 2SD1020 | 制造商:NEC 制造商全称:NEC 功能描述:NPN SILICON TRANSISTOR |
| 2SD1020E | 制造商:NEC 制造商全称:NEC 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 700MA I(C) | TO-221VAR |
| 2SD1020F | 制造商:NEC 制造商全称:NEC 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 700MA I(C) | TO-221VAR |
| 2SD1020H | 制造商:NEC 制造商全称:NEC 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 700MA I(C) | TO-221VAR |
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