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参数资料
| 型号： | 2SD1198R |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | M-A1, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 193K |
| 代理商： | 2SD1198R |
Transistors
1
Publication date: December 2002
SJC00209BED
2SD1198, 2SD1198A
Silicon NPN epitaxial planar type darlington
For low-frequency amplification
■ Features
Forward current transfer ratio h
FE is designed high, which is appro-
priate to the driver circuit of motors and printer hammer: hFE = 4
000 to 20 000.
A shunt resistor is omitted from the driver.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
■ Absolute Maximum Ratings T
a = 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
6.9±0.1
2.5±0.1
(1.0)
(1.5)
(0.85)
0.45±0.05
0.55±0.1
(2.5)
21
3
R 0.7
R 0.9
(0.4)
3.5
±
0.1
4.5
±
0.1
4.1
±
0.2
2.4
±
0.2
1.25
±
0.05
2.0
±
0.2
1.0
±
0.1
(1.5)
Unit: mm
1: Base
2: Collector
3: Emitter
M-A1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
hFE
4 000 to 10 000 8 000 to 20 000
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SD1198
VCBO
30
V
(Emitter open)
2SD1198A
60
Collector-emitter voltage 2SD1198
VCEO
25
V
(Base open)
2SD1198A
50
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
1A
Peak collector current
ICP
1.5
A
Collector power dissipation *
PC
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage
2SD1198
VCBO
IC
= 100 A, I
E
= 030
V
(Emitter open)
2SD1198A
60
Collector-emitter voltage
2SD1198
VCEO
IC = 1 mA, IB = 025
V
(Base open)
2SD1198A
50
Emitter-base voltage (Collector open)
VEBO
IE = 100 A, IC = 05
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 25 V, IE = 0
100
nA
VCB
= 45 V, I
E
= 0
Emitter-base cutoff current (Collector open)
IEBO
VEB = 4 V, IC = 0
100
nA
Forward current transfer ratio *
1, 2
hFE
VCE = 10 V, IC = 1 A
4 000
20 000
Collector-emitter saturation voltage *
1
VCE(sat)
IC
= 1 A, I
B
= 1 mA
1.8
V
Base-emitter saturation voltage *
1
VBE(sat)
IC = 1 A, IB = 1 mA
2.2
V
Transition frequency
fT
VCB = 10 V, IE = 50 mA, f = 200 MHz
150
MHz
Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the
board thickness of 1.7 mm for the collector portion
Internal Connection
B
C
E
≈ 200
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1198S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 25V V(BR)CEO | 1A I(C) | SC-71 |
| 2SD1199 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer type(For low-frequency amplification) |
| 2SD11990S | 功能描述:TRANS NPN 40VCEO 50MA M TYPE RoHS:否 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SD1199R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 50MA I(C) | SC-71 |
| 2SD1199S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 50MA I(C) | SC-71 |
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