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参数资料
| 型号： | 2SD1244R |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | M-A1, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 196K |
| 代理商： | 2SD1244R |
Transistors
1
Publication date: November 2002
SJC00213BED
2SD1244
Silicon NPN epitaxial planar type
For low-frequency power amplification
■ Features
High collector-emitter saturation voltage V
CE(sat)
Satisfactory operation performances at high efficiency with the low-
voltage power supply.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
40
V
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-base voltage (Collector open)
VEBO
7V
Collector current
IC
3A
Peak collector current
ICP
5A
Collector power dissipation *
PC
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC
= 1 mA, I
B
= 020
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 A, IC = 07
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 10 V, IE = 0
0.1
A
Emitter-base cutoff current (Collector open)
IEBO
VEB
= 7 V, I
C
= 0
0.1
A
Forward current transfer ratio *
1
hFE1 *
2
VCE = 2 V, IC = 0.5 A
230
600
hFE2
VCE = 2 V, IC = 2 A
150
Collector-emitter saturation voltage *
1
VCE(sat)
IC
= 3 A, I
B
= 0.1 A
1
V
Transition frequency
fT
VCB = 6 V, IE = 50 mA, f = 200 MHz
150
MHz
Collector output capacitance
Cob
VCB = 20 V, IE = 0, f = 1 MHz
50
pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
6.9±0.1
2.5±0.1
(1.0)
(1.5)
(0.85)
0.45±0.05
0.55±0.1
(2.5)
21
3
R 0.7
R 0.9
(0.4)
3.5
±
0.1
4.5
±
0.1
4.1
±
0.2
2.4
±
0.2
1.25
±
0.05
2.0
±
0.2
1.0
±
0.1
(1.5)
1 : Base
2 : Collector
3 : Emitter
M-A1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the
board thickness of 1.7 mm for the collector portion
Rank
Q
R
hFE1
230 to 380
340 to 600
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相关代理商/技术参数 |
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|---|---|
| 2SD1245 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:SI NPN TRIPLE DIFFUSED PLANAR DARLINGTON |
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| 2SD1246R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 2A I(C) | TO-92 |
| 2SD1246S | 制造商:Sony Semiconductor Solutions Division 功能描述: |
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