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参数资料
| 型号： | 2SD1253AP |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 4 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 封装： | ROHS COMPLIANT, N-G1, 3 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 242K |
| 代理商： | 2SD1253AP |
Power Transistors
1
Publication date: March 2004
SJD00170BED
2SD1253, 2SD1253A
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB0930, 2SB0930A
■ Features
High forward current transfer ratio h
FE which has satisfactory linearity
Low collector-emitter saturation voltage V
CE(sat)
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SD1253
VCBO
60
V
(Emitter open)
2SD1253A
80
Collector-emitter voltage 2SD1253
VCEO
60
V
(Base open)
2SD1253A
80
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
4A
Peak collector current
ICP
8A
Collector power dissipation
PC
40
W
Ta = 25°C
1.3
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
2SD1253
VCEO
IC = 30 mA, IB = 0
60
V
(Base open)
2SD1253A
80
Collector-emitter cutoff
2SD1253
ICES
VCE =
60 V, V
BE = 0
400
A
current (E-B short)
2SD1253A
VCE = 80 V, VBE = 0
400
Collector-emitter cutoff
2SD1253
ICEO
VCE = 30 V, IB = 0
700
A
current (Base open)
2SD1253A
VCE =
60 V, I
B = 0
700
Emitter-base cutoff current (Collector open)
IEBO
VEB = 5 V, IC = 0
1
mA
Forward current transfer ratio
hFE1 *
VCE = 4 V, IC = 1 A
40
250
hFE2
VCE
= 4 V, I
C
= 3 A15
Base-emitter voltage
VBE
VCE = 4 V, IC = 3 A
2.0
V
Collector-emitter saturation voltage
VCE(sat)
IC = 4 A, IB = 0.4 A
1.5
V
Transition frequency
fT
VCE
= 5 V, I
C
= 0.5 A, f = 1 MHz
30
MHz
Turn-on time
ton
IC = 4 A
0.4
s
Strage time
tstg
IB1 = 0.4 A, IB2 = 0.4 A
1.2
s
Fall time
tf
VCC = 50 V
0.5
s
8.5±0.2
3.4±0.3
1.0±0.1
0 to 0.4
6.0±0.2
0.8±0.1 R = 0.5
R = 0.5
1.0±0.1
0.4±0.1
(8.5)
(6.5)
(6.0)
1.3
(1.5)
(7.6)
2.54±0.3
1.4±0.1
5.08±0.5
123
1.5
±
0.1
2.0
±
0.5
10.0
±
0.3
1.5
+0 –0.4
3.0
+0.4 –0.2
4.4
±
0.5
4.4
±0
.5
14.4
±
0.5
Rank
R
Q
P
hFE1
40 to 90
70 to 150
120 to 250
1: Base
2: Collector
3: Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1253AQ | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 4A I(C) | TO-221VAR |
| 2SD1253AR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 4A I(C) | TO-221VAR |
| 2SD1253P | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 4A I(C) | TO-221VAR |
| 2SD1253Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 4A I(C) | TO-221VAR |
| 2SD1253R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 4A I(C) | TO-221VAR |
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