- 您现在的位置：买卖IC网 > PDF目录33425 > 2SD1259P (PANASONIC CORP) 3 A, 60 V, NPN, Si, POWER TRANSISTOR PDF资料下载
参数资料
| 型号： | 2SD1259P |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 封装： | ROHS COMPLIANT, N-G1, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 241K |
| 代理商： | 2SD1259P |
Power Transistors
1
Publication date: February 2004
SJD00175CED
2SD1259, 2SD1259A
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
■ Features
High forward current transfer ratio h
FE
Satisfactory linearity of forward current transfer ratio h
FE
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
Unit: mm
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SD1259
VCBO
80
V
(Emitter open)
2SD1259A
100
Collector-emitter voltage 2SD1259
VCEO
60
V
(Base open)
2SD1259A
80
Emitter-base voltage (Collector open)
VEBO
6V
Collector current
IC
3A
Peak collector current
ICP
6A
Base current
IB
1A
Collector power dissipation
PC
40
W
Ta
= 25°C
1.3
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
2SD1259
VCEO
IC = 25 mA, IB = 0
60
V
(Base open)
2SD1259A
80
Collector-base cutoff
2SD1259
ICBO
VCB =
80 V,I
E = 0
100
A
current (Emitter open)
2SD1259A
VCB = 100 V,IE = 0
100
Collector-emitter cutoff current (Base open)
ICEO
VCE = 40 V,IB = 0
100
A
Emitter-base cutoff current (Collector open)
IEBO
VEB = 6 V,IC = 0
100
A
Forward current transfer ratio
hFE *
VCE = 4 V, IC = 0.5 A
500
2500
Collector-emitter saturation voltage
VCE(sat)
IC = 2 A, IB = 0.05 A
1.0
V
Transition frequency
fT
VCE
= 12 V, I
C
= 0.2 A, f = 10 MHz
50
MHz
8.5±0.2
3.4±0.3
1.0±0.1
0 to 0.4
6.0±0.2
0.8±0.1 R = 0.5
R = 0.5
1.0±0.1
0.4±0.1
(8.5)
(6.5)
(6.0)
1.3
(1.5)
(7.6)
2.54±0.3
1.4±0.1
5.08±0.5
123
1.5
±
0.1
2.0
±
0.5
10.0
±
0.3
1.5
+0 –0.4
3.0
+0.4 –0.2
4.4
±
0.5
4.4
±0
.5
14.4
±
0.5
Rank
Q
P
O
hFE
500 to 1 000
800 to 1500
1200 to 2500
1: Base
2: Collector
3: Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD1259O | 3 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 2SD1261Q | 4 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 2SD1261P | 4 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 2SD1268Q | 3 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD1268P | 3 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1259Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-221VAR |
| 2SD125A | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 100V 7A 60W BEC |
| 2SD125AH | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 100V 7A 60W BEC |
| 2SD1260 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type Darlington(For power amplification and switching) |
| 2SD1260/2SD1260A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:2SD1260. 2SD1260A - NPN Transistor Darlington |
发布紧急采购，3分钟左右您将得到回复。