参数资料
型号: 2SD1261P
厂商: PANASONIC CORP
元件分类: 功率晶体管
英文描述: 4 A, 60 V, NPN, Si, POWER TRANSISTOR
封装: ROHS COMPLIANT, N-G1, 3 PIN
文件页数: 1/4页
文件大小: 249K
代理商: 2SD1261P
Power Transistors
1
Publication date: April 2003
SJD00177BED
2SD1261, 2SD1261A
Silicon NPN triple diffusion planar type darlington
For power amplification
Complementary to 2SB0938, 2SB0938A
■ Features
High forward current transfer ratio h
FE
High-speed switching
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
■ Absolute Maximum Ratings T
C = 25°C
Unit: mm
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SD1261
VCBO
60
V
(Emitter open)
2SD1261A
80
Collector-emitter voltage 2SD1261
VCEO
60
V
(Base open)
2SD1261A
80
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
4A
Peak collector current
ICP
8A
Collector power dissipation
PC
40
W
Ta = 25°C
1.3
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
8.5±0.2
3.4±0.3
1.0±0.1
0 to 0.4
6.0±0.2
0.8±0.1 R = 0.5
R = 0.5
1.0±0.1
0.4±0.1
(8.5)
(6.5)
(6.0)
1.3
(1.5)
(7.6)
2.54±0.3
1.4±0.1
5.08±0.5
123
1.5
±
0.1
2.0
±
0.5
10.0
±
0.3
1.5
+0 –0.4
3.0
+0.4 –0.2
4.4
±
0.5
4.4
±0
.5
14.4
±
0.5
1: Base
2: Collector
3: Emitter
N-G1 Package
Note) Self-supported type package is also prepared
B
C
E
Internal Connection
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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