参数资料
型号: 2SD1261P
厂商: PANASONIC CORP
元件分类: 功率晶体管
英文描述: 4 A, 60 V, NPN, Si, POWER TRANSISTOR
封装: ROHS COMPLIANT, N-G1, 3 PIN
文件页数: 3/4页
文件大小: 249K
代理商: 2SD1261P
2SC5005
3
TYPICAL CHARACTERISTICS (TA = 25
°C)
50
P
T
Total
Power
Dissipation
mW
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
IC
Collector
Current
mA
IC
Collector
Current
mA
h
FE
DC
Current
Gain
fT
Gain
Bandwidth
Product
GHz
|S
21
e|
2
Insertion
Power
Gain
dB
TA – Ambient Temperature – °C
COLLECTOR CURRENT vs.
BASE TO EMITTER
VBE – Base to Emitter Voltage – V
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
VCE – Collector to Emitter Voltage – V
IC – Collector Current – mA
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
IC – Collector Current – mA
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
IC – Collector Current – mA
DC CURRENT GAIN vs.
COLLECTOR CURRENT
0
50
100
150
50
Free Air
0
0.2
1.0
8
24
VCE = 5 V
16
0.4
0.6
0.8
02
10
20
30
46
8
10
0.5
1
5
10
50
20
100
200
220
0
0.5
1
5
10
50
2
4
6
8
10
220
0
0.5
1
10
20
50
2
4
10
12
14
VCE = 5 V
f = 1 GHz
8
6
VCE = 5 V
25
VCE = 5 V
IC = 5 mA
m
140 A
120 A
100 A
80 A
60 A
40 A
20 A
m
IB = 160 A
相关PDF资料
PDF描述
2SD1268Q 3 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2SD1268P 3 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2SD1271AR 7 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2SD1271Q 7 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2SD1275R 2 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
相关代理商/技术参数
参数描述
2SD1261Q 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 4A I(C) | TO-221VAR
2SD1261R 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 4A I(C) | TO-221VAR
2SD1262 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type Darlington
2SD1262/2SD1262A 制造商:未知厂家 制造商全称:未知厂家 功能描述:2SD1262. 2SD1262A - NPN Transistor Darlington
2SD1262A 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon NPN triple diffusion planar type Darlington