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参数资料
| 型号： | 2SD1258PQ |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 1 A, 150 V, NPN, Si, POWER TRANSISTOR |
| 封装： | N-TYPE PACKAGE-3 |
| 文件页数： | 1/2页 |
| 文件大小： | 48K |
| 代理商： | 2SD1258PQ |
1
Power Transistors
2SD1258
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
s Features
q
High foward current transfer ratio hFE
q
Satisfactory linearity of foward current transfer ratio hFE
q
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (T
C=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
IB
PC
Tj
Tstg
Ratings
200
150
6
2.5
1
0.1
40
1.3
150
–55 to +150
Unit
V
A
W
C
s Electrical Characteristics (T
C=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Symbol
ICBO
IEBO
VCEO
hFE
*
VCE(sat)
fT
Conditions
VCB = 200V, IE = 0
VEB = 6V, IC = 0
IC = 25mA, IB = 0
VCE = 4V, IC = 0.2A
IC = 0.5A, IB = 0.02A
VCE = 4V, IC = 0.1A, f = 10MHz
min
150
500
typ
25
max
100
2000
1
Unit
A
V
MHz
*h
FE Rank classification
Rank
Q
P
hFE
500 to 1200 800 to 2000
TC=25°C
Ta=25
°C
Unit: mm
1:Base
2:Collector
3:Emitter
N Type Package
8.5
±0.2
6.0
±0.5
10.0
±0.3
10.5min.
2.0
1.5
±0.1
1.5max.
0.8
±0.1
5.08
±0.5
2.54
±0.3
1.1max.
0.5max.
1.0
±0.1
3.4
±0.3
2
13
Unit: mm
8.5
±0.2
4.4
±0.5
2.0
10.0
±0.3
14.7
±0.5
4.4
±0.5
6.0
±0.3
3.4
±0.3
2.54
±0.3
5.08
±0.5
1.0
±0.1
0.8
±0.1
1.5
+0
–0.4
3.0
+0.4
–0.2
0 to 0.4
1.1 max.
R0.5
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
Note: Ordering can be made by the common rank (PQ rank hFE = 500 to 2000) in the rank classification.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1258Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 1A I(C) | TO-220VAR |
| 2SD1259 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon NPN triple diffusion planar type |
| 2SD1259/2SD1259A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:2SD1259. 2SD1259A - NPN Transistor |
| 2SD1259A | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon NPN triple diffusion planar type |
| 2SD1259AO | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-221VAR |
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