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参数资料
| 型号： | 2SD1259PQ |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 封装： | N-TYPE PACKAGE-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 48K |
| 代理商： | 2SD1259PQ |
1
Power Transistors
2SD1259, 2SD1259A
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
s Features
q
High foward current transfer ratio hFE
q
Satisfactory linearity of foward current transfer ratio hFE
q
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (T
C=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
IB
PC
Tj
Tstg
Ratings
80
100
60
80
6
3
1
40
1.3
150
–55 to +150
Unit
V
A
W
C
2SD1259
2SD1259A
2SD1259
2SD1259A
TC=25°C
Ta=25
°C
s Electrical Characteristics (T
C=25C)
Parameter
Collector cutoff
current
Collector cutoff current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Symbol
ICES
ICEO
IEBO
VCEO
hFE
*
VCE(sat)
fT
Conditions
VCE = 80V, IE = 0
VCE = 100V, IE = 0
VCE = 40V, IB = 0
VCB = 6V, IC = 0
IC = 25mA, IB = 0
VCE = 4V, IC = 0.5A
IC = 2A, IB = 0.05A
VCE = 12V, IC = 0.2A, f = 10MHz
min
60
80
500
typ
50
max
100
2500
1
Unit
A
V
MHz
2SD1259
2SD1259A
2SD1259
2SD1259A
*h
FE Rank classification
Rank
Q
P
O
hFE
500 to 1000 800 to 1500 1200 to 2500
Unit: mm
1:Base
2:Collector
3:Emitter
N Type Package
8.5
±0.2
6.0
±0.5
10.0
±0.3
10.5min.
2.0
1.5
±0.1
1.5max.
0.8
±0.1
5.08
±0.5
2.54
±0.3
1.1max.
0.5max.
1.0
±0.1
3.4
±0.3
2
13
Unit: mm
8.5
±0.2
4.4
±0.5
2.0
10.0
±0.3
14.7
±0.5
4.4
±0.5
6.0
±0.3
3.4
±0.3
2.54
±0.3
5.08
±0.5
1.0
±0.1
0.8
±0.1
1.5
+0
–0.4
3.0
+0.4
–0.2
0 to 0.4
1.1 max.
R0.5
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
Note: Ordering can be made by the common rank (PQ rank hFE = 500 to 1500) in the rank classification.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD1264AP | 2 A, 180 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD1264Q | 2 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD1264P | 2 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD1266P | 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD1266Q | 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1259Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-221VAR |
| 2SD125A | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 100V 7A 60W BEC |
| 2SD125AH | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 100V 7A 60W BEC |
| 2SD1260 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type Darlington(For power amplification and switching) |
| 2SD1260/2SD1260A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:2SD1260. 2SD1260A - NPN Transistor Darlington |
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