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参数资料
| 型号： | 2SD1260Q |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 封装： | ROHS COMPLIANT, N-G1, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 243K |
| 代理商： | 2SD1260Q |
Power Transistors
1
Publication date: April 2003
SJD00176BED
2SD1260, 2SD1260A
Silicon NPN triple diffusion planar type darlington
For power amplification
Complementary to 2SB0937, 2SB0937A
■ Features
High forward current transfer ratio h
FE
High-speed switching
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SD1260
VCBO
60
V
(Emitter open)
2SD1260A
80
Collector-emitter voltage 2SD1260
VCEO
60
V
(Base open)
2SD1260A
80
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
2A
Peak collector current
ICP
4A
Collector power dissipation
PC
35
W
Ta = 25°C
1.3
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
2SD1260
VCEO
IC = 30 mA, IB = 0
60
V
(Base open)
2SD1260A
80
Base-emitter voltage
VBE
VCE =
4 V, I
C =
2 A
2.8
V
Collector-base cutoff
2SD1260
ICBO
VCB = 60 V, IE = 0
1
mA
current (Emitter open)
2SD1260A
VCB = 80 V, IE = 0
1
Collector-emitter cutoff
2SD1260
ICEO
VCE =
30 V, I
B = 0
2
mA
current (Base open)
2SD1260A
VCE = 40 V, IB = 0
2
Emitter-base cutoff current (Collector open)
IEBO
VEB = 5 V, IC = 0
2
mA
Forward current transfer ratio
hFE1
VCE
= 4 V, I
C
= 1 A1 000
hFE2 *
VCE = 4 V, IC = 2 A1 000
10 000
Collector-emitter saturation voltage
VCE(sat)
IC = 2 A, IB = 8 mA
2.5
V
Transition frequency
fT
VCE
= 10 V, I
C
= 0.5 A, f = 1 MHz
20
MHz
Turn-on time
ton
IC
= 2 A
0.5
s
Strage time
tstg
IB1 = 8 mA, IB2 = 8 mA
4.0
s
Fall time
tf
VCC
= 50 V
1.0
s
8.5±0.2
3.4±0.3
1.0±0.1
0 to 0.4
6.0±0.2
0.8±0.1 R = 0.5
R = 0.5
1.0±0.1
0.4±0.1
(8.5)
(6.5)
(6.0)
1.3
(1.5)
(7.6)
2.54±0.3
1.4±0.1
5.08±0.5
123
1.5
±
0.1
2.0
±
0.5
10.0
±
0.3
1.5
+0 –0.4
3.0
+0.4 –0.2
4.4
±
0.5
4.4
±0
.5
14.4
±
0.5
Rank
R
Q
P
hFE2
1 000 to 2500
2 000 to 5 000 4 000 to 10 000
1: Base
2: Collector
3: Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
Internal Connection
B
C
E
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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| 2SD1262AP | 8 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 2SD1262R | 8 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 2SD1262AQ | 8 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 2SD1262P | 8 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 2SD1263AP | 0.75 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1260R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 2A I(C) | TO-221VAR |
| 2SD1261 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type Darlington(For power amplification and switching) |
| 2SD1261/2SD1261A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:2SD1261. 2SD1261A - NPN Transistor Darlington |
| 2SD1261A | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type Darlington(For power amplification and switching) |
| 2SD1261AP | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 4A I(C) | TO-221VAR |
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