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参数资料
| 型号： | 2SD1383KT146 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 300 mA, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件页数： | 1/3页 |
| 文件大小： | 77K |
| 代理商： | 2SD1383KT146 |
2SD1383K
Transistors
Rev.C
1/2
High-gain Amplifier Transistor (32V , 0.3A)
2SD1383K
Features
1) Darlington connection for high DC current gain.
2) Built-in 4k
resistor between base and emitter.
3) Complements the 2SB852K.
Packaging specifications
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
2SD1383K
SMT3
B
W
T146
3000
Denotes hFE
Dimensions (Unit : mm)
Each lead has same dimensions
2SD1383K
(1)Emitter
(2)Base
(3)Collector
Circuit diagram
RBE
4k
E : Emitter
B : Base
C : Collector
C
B
E
Absolute maximum ratings (Ta=25
°C)
Parameter
Symbol
VCBO
VCES
VEBO
IC
PC
Tj
Tstg
Limits
40
32
6
0.3
0.2
150
55 to +150
1
2
Unit
V
A (DC)
1.5
A (Pulse)
W
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1 RBE=0
2 Single pulse Pw=10ms
Electrical characteristics (Ta=25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
VCB
=10V, IE=0A, f=1MHz
fT
250
MHz
VCE
=5V, IE= 10mA, f=100MHz
BVCBO
40
V
IC
=100A
BVCES
32
V
IC
= 1mA , RBE=0
BVEBO
6
V
IE
=100A
ICBO
1
AVCB=24V
IEBO
1
AVEB=4.5V
VCE(sat)
5000
IC
=200mA, IB=0.4mA
hFE
1.5
V
VCE
=5V, IC=0.1A
Cob
3
pF
2
1
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
1 Measured using pulse current.
2 Transition frequency of the device.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD1383KT147/B | 300 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1383KT147/A | 300 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1383KT147/AB | 300 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1404 | 7 A, 150 V, NPN, Si, POWER TRANSISTOR |
| 2SD1405 | 3 A, 50 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1383KT146B | 功能描述:达林顿晶体管 NPN 32V 0.3A RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| 2SD1385 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1387 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTORTO-92 20V 2A .7W ECB |
| 2SD1393 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220AB 50V 1.5A 30W BCE |
| 2SD1394 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220AB 50V 3A 30W BCE |
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