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参数资料
| 型号： | 2SD1383KT146 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 300 mA, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件页数： | 2/3页 |
| 文件大小： | 77K |
| 代理商： | 2SD1383KT146 |
2SD1383K
Transistors
Rev.C
2/2
Electrical characteristic curves
0
25
50
75
100
125
150
AMBIENT TEMPERATURE : Ta (
°C)
Fig.1 Power dissipation curves
0
25
50
75
100
125
POWER
DISSIPATION
:
P
C
/P
CMax
(%)
Fig.2 Ground emitter propagation characteristisc
0.4
0
0.8
1.2
1.6
2.0
2.4
2.8
3.2
BASE TO EMITTER VOLTAGE : VBE (V)
0
2
5
10
20
50
100
200
500
COLLECTOR
CURRENT
:
I
C
(mA)
VCE
=6V
Ta
=
100
°C
Ta
=
25
°C
Ta
=
55
°C
Fig.3 Ground emitter output characteristics
01
50
100
234
5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
0
COLLECTOR
CURRENT
:
I
C
(mA)
Ta=25
°C
3
A
4
A
9
A
8
A
7
A
6
A
5
A
IB=10A
Fig.4 DC current gain vs. collector current (
Ι )
5
10
20
50 100
200
500 1000
2000
20000
10000
2000
1000
500
5000
50000
COLLECTOR CURRENT : IC (mA)
DC
CURRENT
GAIN
:
h
FE
Ta=25
°C
VCE=3V
5V
Fig.5 DC current gain vs. collector current (
ΙΙ )
5
10
20
50 100
200
500 1000
2000
20000
10000
5000
50000
100000
COLLECTOR CURRENT : IC (mA)
DC
CURRENT
GAIN
:
h
FE
VCE=5V
Ta=100
°C
25°
C
55°
C
Fig.8 Collector output capacitance
vs. collector-base voltage
12
510
20
50
2
5
10
20
COLLECTOR TO BASE VOLTAGE : VCB (V)
OUTPUT
CAPACITANCE
:
Cob
(pF)
f=1MHz
IE=0A
Ta=25
°C
Fig.9 Emitter input capacitance
vs. emitter-base voltage
12
5
10
1
2
5
10
20
EMITTER TO BASE VOLTAGE : VEB (V)
EMITTER
INPUT
CAPACITANCE
:
Cib
(pF)
f=1MHz
IE=0A
Ta=25
°C
Fig.7 Gain bandwidth product vs. emitter current
1
2
5 10
20
50 100
50
100
200
500
EMITTER CURRENT : IE (mA)
TRANSISION
FREQUWNCY
:
f
T
(MHz)
VCE=6V
Ta=25
°C
Fig.6 Collector-emitter saturation voltage
vs. collector current
0.5
1
2
5
100
200
500 1000
2000
0.1
0.2
0.5
1
2
COLLECTOR CURRENT : IC (mA)
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(V)
IC/IB=500
Ta=
55°C
100
°C
25
°C
Fig.6 Collector-emitter saturation voltage
vs. collector current
0.5
1
2
5
100
200
500 1000
2000
0.1
0.2
0.5
1
2
COLLECTOR CURRENT : IC (mA)
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(V)
IC/IB=500
Ta=
55°C
100
°C
25
°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1383KT146B | 功能描述:达林顿晶体管 NPN 32V 0.3A RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| 2SD1385 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1387 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTORTO-92 20V 2A .7W ECB |
| 2SD1393 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220AB 50V 1.5A 30W BCE |
| 2SD1394 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220AB 50V 3A 30W BCE |
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