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参数资料
| 型号： | 2SD1407A |
| 元件分类： | 功率晶体管 |
| 英文描述： | 5 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 封装： | LEAD FREE, 2-10R1A, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 114K |
| 代理商： | 2SD1407A |
2SD1407A
2004-07-07
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD1407A
Power Amplifier Applications
High breakdown voltage: VCEO = 100 V
Low collector saturation voltage: VCE (sat) = 2.0 V (max)
Complementary to 2SB1016A
Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
100
V
Collector-emitter voltage
VCEO
100
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
5
A
Base current
IB
0.5
A
Collector power dissipation
(Tc = 25°C)
PC
30
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 100 V, IE = 0
―
100
A
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
―
1
mA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 50 mA, IB = 0
100
―
V
hFE (1)
(Note)
VCE = 5 V, IC = 1 A
40
―
240
DC current gain
hFE (2)
VCE = 5 V, IC = 4 A
20
―
Collector-emitter saturation voltage
VCE (sat)
IC = 4 A, IB = 0.4 A
―
2.0
V
Base-emitter saturation voltage
VBE
VCE = 5 V, IC = 1 A
―
1.5
V
Transition frequency
fT
VCE = 5 V, IC = 1 A
―
12
―
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
―
100
―
pF
Note: hFE (1) classification R: 40 to 80, O: 70 to 140, Y: 120 to 240
Industrial Applications
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
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PDF描述 |
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| 2SD1407A-R | 5 A, 100 V, NPN, Si, POWER TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1407A-O(F) | 功能描述:两极晶体管 - BJT NPN 100V 5A Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD1407A-Y(F) | 功能描述:两极晶体管 - BJT NPN 100V 5A Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD1407A-YF | 制造商:Toshiba America Electronic Components 功能描述:NPN TRIPLE DIFFUSED TYPE |
| 2SD1407Y | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1409 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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