参数资料
型号: 2SD1407A
元件分类: 功率晶体管
英文描述: 5 A, 100 V, NPN, Si, POWER TRANSISTOR
封装: LEAD FREE, 2-10R1A, 3 PIN
文件页数: 3/4页
文件大小: 114K
代理商: 2SD1407A
2SD1407A
2004-07-07
3
Collector-emitter voltage VCE (V)
IC – VCE
C
ollect
or
c
urre
nt
I C
(
A
)
Base-emitter voltage VBE (V)
IC – VBE
C
ollect
or
c
urre
nt
I C
(
A
)
Collector current IC (A)
hFE – IC
D
C
cu
rre
nt
gai
n
h
FE
Collector current IC (A)
VCE (sat) – IC
Col
lect
or
-e
m
itte
rs
a
tu
ra
tion
volta
g
e
V
CE
(s
at
)
(
V
)
Collector-emitter voltage VCE (V)
Safe Operating Area
Coll
ect
or
cur
re
nt
I
C
(A
)
50
IB = 20 mA
100
150
250
200
300
5
0
Common emitter
Tc = 25°C
1
2
3
4
5
6
1
2
3
4
25
Tc = 75°C
5
0
Common emitter
VCE = 5 V
0.4
0.8
1.2
1.6
2.0
2.4
1
2
3
4
25
Tc = 75°C
500
10
0.01
Common emitter
VCE = 5 V
0.03
0.1
0.3
1
3
5
30
50
100
300
25
Tc = 75°C
2
0.03
0.01
Common emitter
IC/IB = 10
0.03
0.1
0.3
1
3
5
0.05
0.1
0.3
0.5
1
1 ms*
IC max (pulsed)*
DC operation
Tc = 25°C
IC max (continuous)
10 ms*
100 ms*
1 s*
VCEO max
20
0.1
3
*: Single nonrepetitive
pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
10
30
100
300
0.3
0.5
1
3
5
10
Ambient temperature Ta (°C)
PC – Ta
C
ollec
tor
po
wer
dis
si
pati
o
n
P
C
(W
)
50
0
Tc = Ta
Infinite heat sink
25
50
75
100
125
150
10
20
30
40
相关PDF资料
PDF描述
2SD1407A-R 5 A, 100 V, NPN, Si, POWER TRANSISTOR
2SD1418DBUR 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD1418DAUR 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD1418DBUL 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD1418DCUR 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
2SD1407A-O(F) 功能描述:两极晶体管 - BJT NPN 100V 5A Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SD1407A-Y(F) 功能描述:两极晶体管 - BJT NPN 100V 5A Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SD1407A-YF 制造商:Toshiba America Electronic Components 功能描述:NPN TRIPLE DIFFUSED TYPE
2SD1407Y 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SD1409 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR