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参数资料
| 型号： | 2SD1616A-K |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | SC-43B, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 104K |
| 代理商： | 2SD1616A-K |
1998
Document No. D16199EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTORS
2SD1616, 2SD1616A
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
Low VCE(sat):
VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA)
Large PT in small dimension with versatility
PT = 0.75 W, VCEO = 50/60 V, IC(DC) = 1.0 A
Complementary transistor with the 2SB1116 and 1116A
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Ratings
Parameter
Symbol
2SD1616 2SD1616A
Unit
Collector to base voltage
VCBO
60
120
V
Collector to emitter voltage
VCEO
50
60
V
Emitter to base voltage
VEBO
6.0
V
Collector current (DC)
IC(DC)
1.0
A
Collector current (pulse)
IC(Pulse)*2.0
A
Total power dissipation
PT
0.75
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
*PW
≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB = 60 V, IE = 0
100
nA
Emitter cutoff current
IEBO
VEB = 6.0 V, IC = 0
100
nA
DC current gain
hFE1**
VCE = 2.0 V, IC = 100 mA
135
600/400
DC current gain
hFE2**
VCE = 2.0 V, IC = 1.0 A
81
DC base voltage
VBE**
VCE = 2.0 V, IC = 50 mA
600
640
700
mV
Collector saturation voltage
VCE(sat)**
IC = 1.0 A, IB = 50 mA
0.15
0.3
V
Base saturation voltage
VBE(sat)**
IC = 1.0 A, IB = 50 mA
0.9
1.2
V
Output capacitance
Cob
VCB = 10 V, IE = 0, f = 1.0 MHz
19
pF
Gain bandwidth product
fT
VCE = 2.0 V, IC =
100 mA
100
160
MHz
Turn-on time
ton
0.07
s
Storage time
tstg
0.95
s
Fall time
tf
VCC = 10 V, IC = 100 mA
IB1 =
IB2 = 10 mA
VBE(off) =
2 to –3 V
0.07
s
** Pulse test PW
≤ 350
s, duty cycle ≤ 2% per pulsed
hFE1/hFE CLASSIFICATION L : 135 to 270 K : 200 to 400 U : 300 to 600 (U rank is not available for the 2SD1616A.)
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| 2SD1616 | 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
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| 2SD1616K | 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1616A-T-AZ-K | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD1616-K (AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD1616-L | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD1618 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR SC-6220V .7A .5W ECB SURFACE MOUNT |
| 2SD1618S-TD-E | 功能描述:两极晶体管 - BJT BIP NPN 0.7A 15V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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