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参数资料
| 型号： | 2SD1682-S |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2.5 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 封装： | TO-126ML, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 46K |
| 代理商： | 2SD1682-S |
2SB1142 / 2SD1682
No.2060-1/5
Applications
Power supplies, relay drivers, lamp drivers.
Features
Adoption of FBET and MBIT processes.
Low saturation voltage.
Large current capacity and wide ASO.
Specifications ( ) : 2SB1142
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--)60
V
Collector-to-Emitter Voltage
VCEO
(--)50
V
Emitter-to-Base Voltage
VEBO
(--)6
V
Collector Current
IC
(--)2.5
A
Collector Current (Pulse)
ICP
(--)5.0
A
Collector Dissipation
PC
1.5
W
Tc=25
°C10
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)50V, IE=0A
(--)100
nA
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0A
(--)100
nA
hFE1VCE=(--)2V, IC=(--)100mA
(100)*
(400)*
DC Current Gain
100*
560*
hFE2VCE=(--)2V, IC=(--)2A
35
Continued on next page.
* : The 2SB1142 / 2SD1682 are classified by 100mA hFE as follows :
Rank
R
S
T
U
2SB1142
hFE
100 to 200
140 to 280
200 to 400
2SD1682
hFE
100 to 200
140 to 280
200 to 400
280 to 560
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN2060B
O1806EA IM TC-00000203 / O2303TN(KOTO) / 92098HA(KT) / D151MH,(KOTO)
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
SANYO Semiconductors
DATA SHEET
2SB1142 / 2SD1682
PNP / NPN Epitaxial Planar Silicon Transistors
50V / 2.5A High-Speed
Switching Applications
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD1682-U | 2.5 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 2SD1682 | 2.5 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 2SB1142-T | 2.5 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 2SD1682-U | 2.5 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 2SD1682 | 2.5 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-126 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1683S | 功能描述:两极晶体管 - BJT BIP NPN 4A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD1683T | 功能描述:两极晶体管 - BJT BIP NPN 4A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD1684 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTOR TO-1 120V 1.5A 1.3W ECB |
| 2SD1684T | 制造商:SANYO 功能描述:mom 100V 1.5A 200 to 400 TO-126ML Bulk 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR NPN 100V 1.5A TO-126 |
| 2SD1685F | 功能描述:两极晶体管 - BJT BIP NPN 5A 20V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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