参数资料
型号: 2SD1710C
元件分类: 功率晶体管
英文描述: 7 A, 500 V, NPN, Si, POWER TRANSISTOR
封装: TO-3PML, 3 PIN
文件页数: 2/4页
文件大小: 54K
代理商: 2SD1710C
2SD1710C
No. 7200-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
DC Current Gain
hFE1VCE=5V, IC=0.6A
20
50
hFE2VCE=5V, IC=3A
8
Gain-Bandwidth Product
fT
VCE=10V, IC=0.6A
18
MHz
Output Capacitance
Cob
VCB=10V, f=1MHz
80
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=3A, IB=0.6A
1
V
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=3A, IB=0.6A
1.5
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=1mA, IE=0A
900
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=5mA, RBE=∞
500
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=1mA, IC=0A
7
V
Collector-to-Emitter Sustain Voltage
VCEX(sus)
IC=2.5A, IB1=--IB2=1A, L=1mH, Clamped
500
V
Turn-ON Time
ton
VCC=200V, 5IB1=--2.5IB2=IC=4A, RL=50Ω
0.5
μs
Storage Time
tstg
VCC=200V, 5IB1=--2.5IB2=IC=4A, RL=50Ω
3.0
μs
Fall Time
tf
VCC=200V, 5IB1=--2.5IB2=IC=4A, RL=50Ω
0.3
μs
Package Dimensions
Switching Time Test Circuit
unit : mm (typ)
7502-002
16.0
5.6
3.1
2.0
12
3
2.8
2.0
5.45
22.0
20.4
1.0
0.6
4.0
21.0
5.0
8.0
3.5
3.4
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PML
VR
RB
VCC=200V
VBE= --5V
+
50Ω
INPUT
OUTPUT
100μF
470μF
PW=20μs
IB1
D.C.≤1%
IB2
RL=50Ω
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector
Current,
I
C
-
A
IC -- VBE
Base-to-Emitter Voltage, VBE -- V
Collector
Current,
I
C
-
A
0
0.2
0.4
0.6
0.8
1.0
1.2
2
4
8
6
0
IT03804
IT03805
26
48
10
0
2
4
6
8
IB=0mA
20mA
50mA
100mA
200mA
400mA
600mA
800mA
1.0A
1.2A
T
a=120
°C
25
°C
--40
°C
VCE=5V
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