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参数资料
| 型号： | 2SD1861TV2 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ATV, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 72K |
| 代理商： | 2SD1861TV2 |
2SD1759 / 2SD1861
Transistors
Rev.A
1/2
Power transistor (40V, 2A)
2SD1759 / 2SD1861
Features
1) Darlington connection for high DC current gain.
2) Built-in 4k
resistor between base and emitter.
3) Complements the 2SB1183 / 2SB1239.
Equivalent circuit
RBE
4k
C
B
E
: Collector
: Base
: Emitter
C
B
E
Absolute maximum ratings (Ta=25
°C)
Parameter
Symbol
VCBO
VCER
VEBO
IC
PC
Tj
Tstg
Limits
40
5
2
1
150
55 to +150
Unit
V
V(RBE
=10k)
V
A(DC)
W
1
W(TC
=25°C)
10
2SD1861
2SD1759
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Printed circuit board 1.7mm thick, collector plating 1cm2 or larger.
Packaging specifications and hFE
Type
2SD1759
CPT3
1k to 200k
TL
2500
2SD1861
ATV
1k to
TV2
2500
Package
hFE
Code
Basic ordering unit (pieces)
External dimensions (Unit : mm)
(1) Base
(2) Collector
(3) Emitter
2.3
0.5
1.0
0.5
9.5
2.5
0.8Min.
1.5
6.5
2.3
( 2
)
( 3
)
C0.5
0.65
0.9
( 1
)
0.75
2.3
0.9
1.5
5.5
5.1
(1) Emitter
(2) Collector
(3) Base
0.45
1.05
Taping specifications
0.5
(1)
0.65Max.
2.54
(2)
2.54
(3)
6.8
1.0
14.5
0.9
4.4
2.5
2SD1759
ROHM : CPT3
EIAJ : SC-63
2SD1861
ROHM : ATV
Electrical characteristics (Ta=25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVCBO
BVCER
BVEBO
ICBO
IEBO
VCE(sat)
Cob
40
5
1000
0.8
11
1
1.5
20000
V
A
V
pF
IC
=50A
IC
=1mA , RBE=10k
IE
=50A
VCB
=24V
VEB
=4V
IC/IB
=0.6A/1.2mA
VCE/IC
=3V/0.5A
hFE
2SD1759
2SD1861
1000
VCB
=10V , IE=0A , f=1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
fT
150
MHz
VCE
=6V , IE= 0.1A , f=100MHz
Transition frequency
Collector-emitter saturation voltage
DC current
transfer ratio
Output capacitance
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| 2SD1862TV2P | 功能描述:两极晶体管 - BJT TRANS GP BJT NPN 32V 2A 3PIN ATV RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD1862TV2Q | 功能描述:两极晶体管 - BJT DRIVER NPN 32V 2A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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