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| 型号： | 2SD1935-7 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 800 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | CP, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 98K |
| 代理商： | 2SD1935-7 |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
Low-Frequency General-Purpose
Amplifier Applications
Ordering number:ENN2516
2SB1295/2SD1935
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
10904TN (KT)/O1598HA (KT)/4207TA, TS No.2516—1/4
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1
Package Dimensions
unit:mm
2018B
[2SB1295/2SD1935]
C
Electrical Characteristics at Ta = 25C
1 : Base
2 : Emitter
3 : Collector
SANYO : CP
Applications
AF power amplifier, medium-speed switching, small-
sized motor drivers.
Features
Large current capacity.
Low collector to emitter saturation voltage.
Ultrasmall-sized package permitting sets to be made
smaller and slimer.
( ) : 2SB1295
Specifications
Absolute Maximum Ratings at Ta = 25C
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* : The 2SB1295/2SD1935 are classified by 50mA hFE as follows :
Continued on next page.
2SB1295
2SB1935
Marking : 2SB1295 : UL/2SD1935 : CT
hFE rank : 2SB1295 : 5, 6, 7/2SD1935 : 5, 6, 7, 8
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相关PDF资料 |
PDF描述 |
|---|---|
| 2SB1295 | 800 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1295-7 | 800 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1935-5 | 800 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1935-8 | 800 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1295-6 | 800 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1936T-SSH | 制造商:ON Semiconductor 功能描述: |
| 2SD1938 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1938(F)-S(TX) | 制造商:Panasonic Industrial Company 功能描述: |
| 2SD1938FSL | 功能描述:TRANS NPN AF AMP 20VCEO MINI RoHS:否 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SD1938FTL | 功能描述:TRANS NPN AF AMP 20VCEO MINI RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
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