参数资料
型号: 2SD1950VK
元件分类: 功率晶体管
英文描述: 2 A, 25 V, NPN, Si, POWER TRANSISTOR
封装: POWER, MINIMOLD PACKAGE-3
文件页数: 1/6页
文件大小: 1726K
代理商: 2SD1950VK
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by:
Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
相关PDF资料
PDF描述
2SD1950VM 2 A, 25 V, NPN, Si, POWER TRANSISTOR
2SD1953 1500 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126
2SD1953 1500 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126
2SD1957G 7 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-220FP
2SD1957/G 7 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-220FP
相关代理商/技术参数
参数描述
2SD1955 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR SC-64(TP)110V 3A 20W BCE
2SD1957 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220FP 120V 7A 30W BCE
2SD1958 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANS. TO220ML200V 1.5A 30W
2SD1963T100R 功能描述:两极晶体管 - BJT NPN 20V 3A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SD1963T100S 功能描述:两极晶体管 - BJT NPN 20V 3A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2