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参数资料
| 型号： | 2SD1985Q |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 封装： | TO-220, FULL PACK-3 |
| 文件页数： | 2/3页 |
| 文件大小： | 166K |
| 代理商： | 2SD1985Q |
2
Power Transistors
2SD1985, 2SD1985A
PC —Ta
IC —VCE
IC —VBE
VCE(sat) —IC
hFE —IC
fT —IC
Area of safe operation (ASO)
Rth(t) —t
0
160
40
120
80
140
20
100
60
0
40
30
10
20
(1) T
C=Ta
(2) With a 100
× 100 × 2mm
Al heat sink
(3) Without heat sink
(1)
(3)
(2)
Ambient temperature Ta (C)
Collector
power
dissipation
P
C
(W
)
012
10
8
26
4
0
5
4
3
2
1
T
C=25C
I
B=100mA
90mA
80mA
70mA
60mA
40mA
30mA
20mA
10mA
50mA
Collector to emitter voltage V
CE
(V)
Collector
current
I
C
(A
)
02.4
2.0
1.6
0.4
1.2
0.8
0
8
6
2
5
7
4
1
3
T
C=100C
25C
–25C
V
CE=4V
Base to emitter voltage V
BE
(V)
Collector
current
I
C
(A
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C/IB=8
T
C=100C
25C
–25C
Collector current I
C
(A)
Collector
to
emitter
saturation
voltage
V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
1
3
10
30
100
300
1000
3000
10000
V
CE=4V
T
C=100C
25C
–25C
Collector current I
C
(A)
Forward
current
transfer
ratio
h
FE
0.01
0.1
1
10
0.03
0.3
3
1
3
10
30
100
300
1000
3000
10000
V
CE=5V
f=10MHz
T
C=25C
Collector current I
C
(A)
Transition
frequency
f
T
(MHz
)
–1
–10
–100
–1000
–3
–30
–300
– 0.001
– 0.003
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
10ms
t=1ms
DC
2SD1985
2SD1985A
I
CP
I
C
Non repetitive pulse
T
C=25C
Collector to emitter voltage V
CE
(V)
Collector
current
I
C
(A
)
10–4
10
10–3
10–1
10–2
1103
102
104
0.1
1
10
100
10000
1000
Note: R
th was measured at Ta=25C and under natural convection.
(1) P
T=10V × 0.2A (2W) and without heat sink
(2) P
T=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
(1)
(2)
Time t (s)
Thermal
resistance
R
th
(t)
(C/W
)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD1985AQ | 3 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 2SD1993R | 100 mA, 55 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1993S | 100 mA, 55 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1993T | 100 mA, 55 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1994 | 1000 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1987 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220FP 60V 4A 30W BCE |
| 2SD1988 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220AB 45V 2A 25W BCE |
| 2SD199 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 800V .5A 25W BEC |
| 2SD1991A | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1991A0A | 功能描述:TRANS NPN GP AMP 50VCEO MT-1 RoHS:否 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
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