参数资料
型号: 2SD2000Q
厂商: PANASONIC CORP
元件分类: 功率晶体管
英文描述: 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封装: ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3
文件页数: 1/4页
文件大小: 251K
代理商: 2SD2000Q
Power Transistors
1
Publication date: September 2003
SJD00238BED
2SD2000
Silicon NPN triple diffusion planar type
For power switching
■ Features
High-speed switching
Satisfactory linearity of forward current transfer ratio h
FE
Large collector power dissipation P
C
Full-pack package which can be installed to the heat sink with one screw.
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
Unit: mm
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC = 25 mA, IB = 0
60
V
Base-emitter voltage
VBE
VCE
= 4 V, I
C
= 4 A
2.0
V
Collector-base cut-off current (Emitter open)
ICBO
VCB = 80 V, IE = 0
100
A
Emitter-base cut-off current (Collector open)
IEBO
VEB = 6 V, IC = 0
100
A
Forward current transfer ratio
hFE1 *
VCE
= 4 V, I
C
= 1 A
70
250
hFE2
VCE = 4 V, IC = 4 A
20
Collector-emitter saturation voltage
VCE(sat)
IC = 4 A, IB = 0.4 A
1.5
V
Transition frequency
fT
VCE
= 12 V, I
C
= 0.2 A, f = 10 MHz
80
MHz
Turn-on time
ton
IC = 4 A, IB1 = 0.4 A, IB2 = 0.4 A,
0.3
s
Storage time
tstg
VCC = 50 V
1.0
s
Fall time
tf
0.2
s
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
80
V
Collector-emitter voltage (Base open)
VCEO
60
V
Emitter-base voltage (Collector open)
VEBO
6V
Collector current
IC
4A
Peak collector current
ICP
8A
Base current
IB
1A
Collector power
PC
35
W
dissipation
Ta = 25°C
2.0
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE1
70 to 150
120 to 250
10.0±0.2
5.5±0.2
7.5
±
0.2
16.7
±
0.3
0.7
±
0.1
14.0
±
0.5
Solder
Dip
(4.0)
0.5
+0.2
–0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.3
5.08±0.5
2
13
2.7±0.2
4.2±0.2
4.2
±
0.2
φ 3.1±0.1
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相关PDF资料
PDF描述
2N3867 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
2N2823 30 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-63
2N5209M1TC 50 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2N5210STOB 50 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SA733Q 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
相关代理商/技术参数
参数描述
2SD2000R 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 4A I(C) | TO-127VAR
2SD2004 制造商:ROHM 制造商全称:Rohm 功能描述:1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE
2SD2004N 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | SIP
2SD2004P 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | SIP
2SD2004Q 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | SIP