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参数资料
| 型号： | 2SD2066P |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 12 A, 160 V, NPN, Si, POWER TRANSISTOR |
| 封装： | TOP3, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 170K |
| 代理商： | 2SD2066P |
1
Power Transistors
2SD2066
Silicon NPN triple diffusion planar type
For high power amplification
Complementary to 2SB1373
s Features
q
High breakdown voltage: VCEO = 160V (min.)
q
Extremely satisfactory linearity of the forward current transfer
ratio hFE
q
High transition frequency fT
q
Wide area of safe operation (ASO)
s Absolute Maximum Ratings (T
C=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
160
5
20
12
120
2.5
150
–55 to +150
Unit
V
A
W
C
s Electrical Characteristics (T
C=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
IEBO
hFE1
hFE2
*
hFE3
VBE
VCE(sat)
fT
Cob
Conditions
VCB = 160V, IE = 0
VEB = 3V, IC = 0
VCE = 5V, IC = 20mA
VCE = 5V, IC = 1A
VCE = 5V, IC = 8A
IC = 8A, IB = 0.8A
VCE = 5V, IC = 0.5A, f = 1MHz
VCB = 10V, IE = 0, f = 1MHz
min
20
60
20
typ
20
210
max
50
200
1.8
2.0
Unit
A
V
MHz
pF
*h
FE2 Rank classification
Rank
Q
S
P
hFE2
60 to 120
80 to 160
100 to 200
TC=25°C
Ta=25
°C
Unit: mm
4.5
±0.2
15.0
±0.5
13.0
±0.5
20.0
±0.3
19.0
±0.3
15.0
±0.2
Solder
Dip
4.0
±0.1
4.0
±0.1
12.5
3.5
16.2
±0.5
10.5
±0.5
10.9
±0.5
5.45
±0.3
1.1
±0.1
φ3.2±0.1
2.0
±0.2
2.0
±0.1
1.4
±0.3
0.6
±0.2
123
1:Base
2:Collector
3:Emitter
EIAJ:SC–65(a)
TOP–3 Package(a)
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD2066Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 12A I(C) | TO-247VAR |
| 2SD2066S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 12A I(C) | TO-247VAR |
| 2SD2067 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer type(For low-frequency output amplification) |
| 2SD2067(TENTATIVE) | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:2SD2067 (Tentative) - Silicon NPN epitaxial planer type |
| 2SD20670RA | 功能描述:TRANS NPN 100VCEO 2A MT-2 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
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