- 您现在的位置：买卖IC网 > PDF目录31706 > 2SD2098T100/R 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | 2SD2098T100/R |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | MPT3, SC-62, 3 PIN |
| 文件页数： | 4/5页 |
| 文件大小： | 109K |
| 代理商： | 2SD2098T100/R |
2SD2098 / 2SD2118
Transistors
Rev.B
4/4
2
1
0.5
0.2
0.1
0.05
0.02
0.01
2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2
5
10
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(V)
COLLECTOR CURRENT : IC
(A)
Fig.10 Collector-emitter
saturation voltage vs.
collector current (V)
lC/lB
=50
25
°C
25°C
Ta
=100°C
1m 2m 5m10m20m 50m0.1 0.2 0.5 1
1000
500
200
50
20
100
10
2
5
1
Ta
=25°C
VCE
=6V
EMITTER CURRENT : IE
(A)
TRANSITION
FREQUENCY
:
f
T(MHz)
Fig.11 Gain bandwidth product vs.
emitter current
COLLECTOR
OUTPUT
CAPACITANCE
:
Cob
(pF)
EMITTER
INPUT
CAPACITANCE
:
Cib
(pF)
COLLECTOR TO BASE VOLTAGE : VCB
(V)
EMITTER TO BASE VOLTAGE
: VEB
(V)
Fig.12 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
10
20
50
100
200
500
1000
0.1 0.2
0.5
1
2
5
10
20
50
Ta
=25°C
f
=1MHz
IC
=0A
IE
=0A
Cob
Cib
Pw
=1ms
Pw
=
100
s
Ic max (Pulse)
DC
Ta
=25(°C)
Single pulse
Recommended land
pattern
Pw
=
10ms
Pw
=100ms
COLLECTOR
CURRENT
:
I
C
(A)
0.2 0.5 1
2
5 10 20 50 100
500
200
50
5
20
2
10
1
200m
100m
50m
20m
10m
500m
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Fig.13 Safe operating area
(2SD2098)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
COLLECTOR
CURRENT
:
I
C
(A)
0.2 0.5 1
2
5 10 20 50 100
500
200
50
5
20
2
10
1
200m
100m
50m
20m
10m
500m
Fig.14 Safe operating area
(2SD2118)
Ic max (Pulse)
DC
Ta
=25 (°C)
Single pulse
Pw
=
10ms
Pw
=
100ms
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD2108 | 8 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 2SD2139P | 3 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 2SD2139O | 3 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 2SD2156Q | 3 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 2SD2156AQ | 3 A, 80 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD2098T100S | 功能描述:两极晶体管 - BJT NPN 20V 5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD2099 | 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:NPN Epitaxial Planar Silicon Transistor |
| 2SD2100 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Compact Motor Driver Applications |
| 2SD2101 | 制造商:JMNIC 制造商全称:Quanzhou Jinmei Electronic Co.,Ltd. 功能描述:Silicon NPN Power Transistors |
| 2SD2102 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:SILICON NPN TRIPLE DIFFUSED LOW FREQUENCY POWER AMFPLIFIER |
发布紧急采购，3分钟左右您将得到回复。