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参数资料
| 型号： | 2SD2114KT146/V |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SMT3, SC-59, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 93K |
| 代理商： | 2SD2114KT146/V |
2SD2114K / 2SD2144S
Transistors
Rev.B
2/4
Electrical characteristics (Ta=25
°C)
Parameter
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
fT
Cob
Min.
25
20
12
0.18
350
8.0
0.5
0.4
V
IC
=10A
IC
=1mA
IE
=10A
VCB
=20V
VEB
=10V
IC/IB
=500mA/20mA
VCE
=10V, IE= 50mA, f=100MHz
VCB
=10V, IE=0A, f=1MHz
V
A
hFE
820
2700
VCE
=3V, IC=10mA
V
MHz
pF
Ron
0.8
IB
=1mA, Vi=100mV(rms), f=1kHz
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Output On-resistance
Measured using pulse current
Packaging specifications and hFE
Package
Code
T146
TP
3000
5000
Taping
Basic ordering
unit (pieces)
VW
hFE
VW
2SD2114K
2SD2144S
Type
hFE values are classified as follows :
Item
hFE
V
820 to 1800
W
1200 to 2700
Electrical characteristic curves
0
0.4
0.8
1.2
1.6
2.0
0
0.1
0.2
0.3
0.4
0.5
Ta
=25°C
0.2
A
0.4
A
0.6
A
0.8
A
1.0
A
1.2
A
1.4
A
1.6
A
IB
=0
1.8
A
2.0
A
COLLECTOR
CURRENT
:
I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Fig.1 Grounded emitter output
characteristics ( )
0
200
400
600
800
1000
02468
10
Ta
=25
°C
Measured using
pulse current.
0.2mA
0.4mA
0.6mA
0.8mA
1.0mA
1.2mA
1.4mA
1.6mA
1.8mA 2.0mA
IB
=0mA
COLLECTOR
CURRENT
:
I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Fig.2 Grounded emitter output
characteristics (
)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
2
5
10
20
50
100
200
500
1000
COLLECTOR
CURRENT
:
I
C
(mA)
BASE TO EMITTER VOLTAGE : VBE
(V)
Fig.3 Grounded emitter propagation
characteristics
VCE
=3V
Measured using
pulse current.
25
°C
25°C
Ta
=100°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD2114KT146W | 功能描述:两极晶体管 - BJT NPN 20V 0.5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD2114KU | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 500MA I(C) | SC-59 |
| 2SD2114KV | 制造商:ROHM 制造商全称:Rohm 功能描述:High-current Gain MediumPower Transistor (20V, 0.5A) |
| 2SD2114KW | 制造商:ROHM 制造商全称:Rohm 功能描述:High-current Gain MediumPower Transistor (20V, 0.5A) |
| 2SD2115 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial Planar |
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